{"id":735,"date":"2026-11-08T23:03:29","date_gmt":"2026-11-08T15:03:29","guid":{"rendered":"https:\/\/siliconcarbide.net\/?p=735"},"modified":"2026-11-08T23:03:29","modified_gmt":"2026-11-08T15:03:29","slug":"firin-donanimi-icin-yeniden-kristallestirilmis-silikon-karbur","status":"publish","type":"post","link":"https:\/\/siliconcarbide.net\/tr\/recrystallized-silicon-carbide-for-kiln-furniture\/","title":{"rendered":"F\u0131r\u0131n Donan\u0131m\u0131 i\u00e7in Yeniden Kristalle\u015ftirilmi\u015f Silikon Karb\u00fcr"},"content":{"rendered":"

Yeniden Kristalle\u015ftirilmi\u015f Silikon Karb\u00fcr (RSiC \/ RSC) \u2014 F\u0131r\u0131n Donan\u0131m\u0131, Br\u00fcl\u00f6r Nozullar\u0131 ve Y\u00fcksek S\u0131cakl\u0131k Yap\u0131sal Par\u00e7alar\u0131 i\u00e7in<\/span><\/h1>\n

E\u011fer f\u0131r\u0131n d\u00f6ng\u00fcn\u00fcz 1450 \u00b0C\u2019nin \u00fczerinde ger\u00e7ekle\u015fiyorsa, h\u0131zl\u0131 \u0131s\u0131tma\/so\u011futma i\u00e7eriyorsa ve bir sinterleme yard\u0131mc\u0131 maddesi ya da serbest silikon faz\u0131 zay\u0131f halka haline geliyorsa \u2014 bu, malzeme se\u00e7imi yapmadan \u00f6nce okuman\u0131z gereken sayfad\u0131r.<\/span><\/strong> RSiC, \u201cba\u015fka bir SiC s\u0131n\u0131f\u0131\u201d de\u011fildir. Bu, \u015fu durumlarda tercih etti\u011finiz s\u0131n\u0131ft\u0131r: <\/span>termal \u015fok direnci ve kimyasal safl\u0131k, maksimum yo\u011funluktan daha \u00f6nemlidir<\/span><\/strong>.<\/span><\/p>\n

Sonraki t\u00fcm kararlar\u0131 etkileyen tek ayr\u0131m<\/span><\/h2>\n

\u00c7o\u011fu tedarik\u00e7i sayfas\u0131nda RSiC\u2019nin yo\u011funlu\u011fu, g\u00f6zeneklili\u011fi ve mukavemeti belirtilir ve bu bilgilerle yetinilir. Bu bilgiler gerekli olmakla birlikte yeterli de\u011fildir. Karar verme a\u00e7\u0131s\u0131ndan \u00f6nemli olan soru \u015fudur: <\/span>Neden birisi, teknik \u00f6zellik tablosunda daha iyi g\u00f6r\u00fcnen yo\u011fun bir SSiC yerine, 10\u201320% a\u00e7\u0131k g\u00f6zeneklili\u011fe sahip bir silikon karb\u00fcr\u00fc kasten tercih etsin ki?<\/span><\/strong><\/p>\n

Cevap, mikroyap\u0131da yat\u0131yor. RSiC, y\u00fcksek safl\u0131kta SiC tozunun yakla\u015f\u0131k 2200\u20132450 \u00b0C'de sinterlenmesi yoluyla \u00fcretilir. <\/span>sinterleme katk\u0131 maddeleri olmadan<\/span><\/strong>. Silikon karb\u00fcr taneleri, bir buharla\u015fma-yo\u011fu\u015fma mekanizmas\u0131yla b\u00fcy\u00fcr ve taneler aras\u0131nda do\u011frudan boyun ba\u011flar\u0131 olu\u015fturur. Malzeme pi\u015firme s\u0131ras\u0131nda \u00e7ok az b\u00fcz\u00fcl\u00fcr ve yo\u011fun SiC\u2019nin sinterleme yard\u0131mc\u0131 maddeleri veya serbest silikonla dolduraca\u011f\u0131 bo\u015fluk \u015fu \u015fekilde kal\u0131r: <\/span>ba\u011flant\u0131l\u0131, a\u00e7\u0131k g\u00f6zeneklilik<\/span><\/strong>. Bu g\u00f6zeneklilik bir \u00fcretim hatas\u0131 de\u011fildir. Bu, RSiC\u2019ye termal \u015fok direncini ve kimyasal inertli\u011fini kazand\u0131ran i\u015flevsel bir \u00f6zelliktir.<\/span><\/p>\n

Bu, SiC kalitelerini anlayan bir al\u0131c\u0131y\u0131, yaln\u0131zca yo\u011funluk s\u00fctununu kar\u015f\u0131la\u015ft\u0131ran bir al\u0131c\u0131dan ay\u0131ran de\u011ferlendirme kriteridir.<\/span><\/p>\n

RSiC, SSiC ve SiSiC\/RBSiC: \u00c7o\u011fu tedarik\u00e7inin \u00fcr\u00fcn sayfas\u0131nda yer vermedi\u011fi se\u00e7im tablosu<\/span><\/h2>\n
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\u00dcr\u00fcn<\/span><\/th>\nRSiC (Yeniden Kristalle\u015ftirilmi\u015f)<\/span><\/strong><\/th>\nSSiC (Bas\u0131n\u00e7s\u0131z Sinterlenmi\u015f)<\/span><\/strong><\/th>\nSiSiC \/ RBSiC (Reaksiyonla Ba\u011flanm\u0131\u015f)<\/span><\/strong><\/th>\n<\/tr>\n<\/thead>\n
SiC safl\u0131\u011f\u0131<\/span><\/strong><\/td>\n\u226599%, <\/span>sinterleme yard\u0131mc\u0131 maddesi yok<\/span><\/strong><\/td>\nGenellikle >98%, bor\/karbon sinterleme yard\u0131mc\u0131 maddeleri i\u00e7erir<\/span><\/td>\nSiC iskelet + <\/span>8\u201315% serbest silikon<\/span><\/strong><\/td>\n<\/tr>\n
A\u00e7\u0131k g\u00f6zeneklilik<\/span><\/strong><\/td>\n10\u201320% (\u00e7al\u0131\u015f\u0131r durumda, ba\u011fl\u0131)<\/span><\/strong><\/td>\nGenellikle <2\u20133%<\/span><\/td>\nS\u0131f\u0131ra yak\u0131n (g\u00f6zenekler Si ile doldurulmu\u015f)<\/span><\/td>\n<\/tr>\n
Maksimum \u00e7al\u0131\u015fma s\u0131cakl\u0131\u011f\u0131 (hava)<\/span><\/strong><\/td>\n~1600\u20131650 \u00b0C<\/span><\/strong><\/td>\n~1500\u20131550 \u00b0C (kullan\u0131lan yard\u0131mc\u0131 maddeye ba\u011fl\u0131 olarak)<\/span><\/td>\nUzun vadede ~1400 \u00b0C ile s\u0131n\u0131rl\u0131d\u0131r<\/span><\/strong> (serbest Si yumu\u015far)<\/span><\/td>\n<\/tr>\n
Termal \u015fok direnci<\/span><\/strong><\/td>\nM\u00fckemmel<\/span><\/strong> \u2014 RSiC\u2019nin tercih edilmesinin ba\u015fl\u0131ca nedeni<\/span><\/td>\n\u0130yi, ancak daha a\u011f\u0131r g\u00f6vdesi ve yard\u0131mc\u0131 ekipmanlar nedeniyle s\u0131n\u0131rl\u0131<\/span><\/td>\nOrta d\u00fczeyde; serbest silikon, d\u00fc\u015f\u00fck erime noktal\u0131 bir faz olu\u015fturur<\/span><\/td>\n<\/tr>\n
Kimyasal dayan\u0131kl\u0131l\u0131k<\/span><\/strong><\/td>\nM\u00fckemmel \u2014 serbest Si yok, cams\u0131 tane s\u0131n\u0131r\u0131 faz\u0131 yok<\/span><\/td>\n\u0130yi, ancak sinterleme yard\u0131mc\u0131 maddeleri agresif kimyasal ortamlarda s\u00fcz\u00fcl\u00fcp d\u0131\u015far\u0131 \u00e7\u0131kabilir<\/span><\/td>\nSerbest silikon, g\u00fc\u00e7l\u00fc alkali ve HF\u2019ye kar\u015f\u0131 direnci s\u0131n\u0131rlar<\/span><\/strong><\/td>\n<\/tr>\n
Tipik geometri \/ maliyet mant\u0131\u011f\u0131<\/span><\/strong><\/td>\nLevhalar, kiri\u015fler, borular, nozullar \u2014 <\/span>ince cidarl\u0131 ve termal d\u00f6ng\u00fcye tabi tutulmu\u015f par\u00e7alar<\/span><\/strong><\/td>\nY\u00fcksek a\u015f\u0131nmaya maruz kalan par\u00e7alar, contalar, k\u00fc\u00e7\u00fck hassas bile\u015fenler<\/span><\/td>\nB\u00fcy\u00fck, karma\u015f\u0131k, net \u015fekle yak\u0131n par\u00e7alar<\/span><\/strong> maksimum s\u0131cakl\u0131ktan \u00e7ok maliyetin daha \u00f6nemli oldu\u011fu durumlarda<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

Se\u00e7im kural\u0131:<\/span><\/strong> notu \u015fununla e\u015fle\u015ftir <\/span>s\u0131cakl\u0131k, atmosfer, kimyasal temas ve termal d\u00f6ng\u00fc \u2014 \u201cSiC\u201d k\u0131saltmas\u0131na de\u011fil.\u201d<\/span><\/strong> Uygulama, s\u0131zd\u0131rmazl\u0131k veya a\u015f\u0131nma a\u00e7\u0131s\u0131ndan yo\u011fun, d\u00fc\u015f\u00fck g\u00f6zenekli bir y\u00fczey gerektiriyorsa, RSiC yanl\u0131\u015f bir se\u00e7imdir. Uygulama, 1450\u00b0C\u2019nin \u00fczerinde tekrarlanan h\u0131zl\u0131 \u0131s\u0131nma ve so\u011futma i\u015flemlerini i\u00e7eriyorsa ve serbest silikon ya da sinterleme yard\u0131mc\u0131s\u0131 bir faz ar\u0131zan\u0131n kayna\u011f\u0131 haline geliyorsa, RSiC genellikle bu ko\u015fullara dayanabilen tek SiC s\u0131n\u0131f\u0131d\u0131r<\/span>.<\/span><\/p>\n

Teknik \u00f6zellikler \u2014 teknik \u015fartname ve giri\u015f denetimi a\u00e7\u0131s\u0131ndan \u00f6nem ta\u015f\u0131yan rakamlar<\/span><\/h2>\n

A\u015fa\u011f\u0131daki tablo, bir <\/span>herhangi bir RSiC tedarik\u00e7isinin teknik \u00f6zellik belgesini de\u011ferlendirirken referans noktas\u0131<\/span><\/strong>. De\u011ferler, tane boyutu, \u015fekillendirme y\u00f6ntemi ve pi\u015firme profiline g\u00f6re de\u011fi\u015fiklik g\u00f6sterir; aral\u0131k belirtmeden tek bir rakam veren bir tedarik\u00e7iden, test standard\u0131 ve numune geometrisinin ne oldu\u011fu sorulmal\u0131d\u0131r.<\/span><\/p>\n

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Parametre<\/span><\/th>\nTipik RSiC aral\u0131\u011f\u0131<\/span><\/th>\nM\u00fchendislik notu<\/span><\/th>\n<\/tr>\n<\/thead>\n
SiC i\u00e7eri\u011fi<\/span><\/strong><\/td>\n\u226599 a\u011f\u0131rl\u0131k\u00e7a %<\/span><\/td>\nSinterleme yard\u0131mc\u0131 maddesi yok<\/span><\/strong> ay\u0131rt edici safl\u0131k iddias\u0131d\u0131r; ICP veya XRF ile do\u011frulama talep edin.<\/span><\/td>\n<\/tr>\n
Y\u0131\u011f\u0131n yo\u011funlu\u011fu<\/span><\/strong><\/td>\n2,0\u20132,75 g\/cm\u00b3<\/span><\/td>\nAlt u\u00e7, daha y\u00fcksek g\u00f6zeneklilik anlam\u0131na gelir; yo\u011funluk tek ba\u015f\u0131na bir kalite g\u00f6stergesi de\u011fildir.<\/span><\/td>\n<\/tr>\n
A\u00e7\u0131k g\u00f6zeneklilik<\/span><\/strong><\/td>\n10\u201320% (i\u015flevsel s\u0131n\u0131flar)<\/span><\/strong><\/td>\nBu <\/span>ba\u011fl\u0131<\/span><\/strong> G\u00f6zeneklili\u011fin niteli\u011fi, ge\u00e7irgenlik ve termal \u015fok a\u00e7\u0131s\u0131ndan \u00f6nemlidir; sadece y\u00fczde de\u011feri de\u011fil.<\/span><\/td>\n<\/tr>\n
E\u011filme mukavemeti (RT)<\/span><\/strong><\/td>\n~80\u2013110 MPa<\/span><\/td>\nRSiC \u015fudur: <\/span>de\u011fil<\/span><\/strong> en y\u00fcksek mukavemetli SiC; SSiC\u2019nin daha dayan\u0131kl\u0131 olaca\u011f\u0131 y\u00fck ta\u015f\u0131yan yap\u0131sal par\u00e7alar i\u00e7in bunu belirtmeyin.<\/span><\/td>\n<\/tr>\n
B\u00fck\u00fclme mukavemeti (1200 \u00b0C)<\/span><\/strong><\/td>\n~90\u2013110 MPa<\/span><\/td>\nS\u0131cakl\u0131kta mukavemetini korumas\u0131, serbest silikon i\u00e7eren kaliteler kar\u015f\u0131s\u0131nda \u00f6nemli bir avantajd\u0131r.<\/span><\/td>\n<\/tr>\n
Maksimum \u00e7al\u0131\u015fma s\u0131cakl\u0131\u011f\u0131 (hava)<\/span><\/strong><\/td>\n~1600\u20131650 \u00b0C<\/span><\/strong><\/td>\nBunun \u00fczerine, oksidasyon kinetikleri h\u0131zlan\u0131r; inert atmosfer ko\u015fullar\u0131nda dayan\u0131m s\u0131cakl\u0131\u011f\u0131 ~1800\u00b0C\u2019ye ula\u015fabilir.<\/span><\/td>\n<\/tr>\n
Maksimum \u00e7al\u0131\u015fma s\u0131cakl\u0131\u011f\u0131 (inert ortamda)<\/span><\/strong><\/td>\n~1800 \u00b0C<\/span><\/td>\nTedarik\u00e7ilerin iddialar\u0131n\u0131 kar\u015f\u0131la\u015ft\u0131r\u0131rken atmosfer ko\u015fullar\u0131n\u0131 a\u00e7\u0131k\u00e7a belirtin.<\/span><\/td>\n<\/tr>\n
Is\u0131l iletkenlik (RT)<\/span><\/strong><\/td>\n~23 W\/m\u00b7K<\/span><\/td>\nOrta d\u00fczeyde; SiC s\u0131n\u0131flar\u0131 aras\u0131nda en y\u00fcksek seviye olmasa da, f\u0131r\u0131n donan\u0131m\u0131 ve radyant t\u00fcpler i\u00e7in yeterlidir.<\/span><\/td>\n<\/tr>\n
CTE (20\u20131000 \u00b0C)<\/span><\/strong><\/td>\n~4,6\u20134,8 \u00d7 10\u207b\u2076 \/K<\/span><\/td>\nD\u00fc\u015f\u00fck genle\u015fme, termal \u015fok direncinin malzeme d\u00fczeyindeki temelidir.<\/span><\/td>\n<\/tr>\n
Termal \u015fok parametresi R1<\/span><\/strong><\/td>\n~56 K<\/span><\/td>\nKar\u015f\u0131la\u015ft\u0131rmal\u0131 bir \u00f6l\u00e7\u00fct; bunu, farkl\u0131 tedarik\u00e7ilerden gelen RSiC s\u0131n\u0131flar\u0131n\u0131 s\u0131ralamak i\u00e7in kullan\u0131n, mutlak bir \u201cge\u00e7ti\/kalmad\u0131\u201d kriteri olarak de\u011fil.<\/span><\/td>\n<\/tr>\n
Tane boyutu<\/span><\/strong><\/td>\n1\u2013150 \u03bcm (boylamsal)<\/span><\/td>\nRSiC\u2019de iri taneler normaldir ve k\u00f6pr\u00fc yap\u0131s\u0131na katk\u0131da bulunur; \u00e7ok ince taneler ise farkl\u0131 bir kalite s\u0131n\u0131f\u0131na i\u015faret edebilir.<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

Tedarik\u00e7i teknik verilerinden entegre edilen veri kaynaklar\u0131; aral\u0131klar normal ticari farkl\u0131l\u0131klar\u0131 yans\u0131tmaktad\u0131r ve her geometri i\u00e7in bir garanti te\u015fkil etmemektedir<\/span><\/strong>.<\/span><\/p>\n

RSiC'nin do\u011fru bir teknik \u00f6zellik oldu\u011fu durumlar \u2014 ve yanl\u0131\u015f oldu\u011fu durumlar<\/span><\/h2>\n

Ar\u0131za t\u00fcr\u00fc, s\u0131cakl\u0131kta meydana gelen termal \u015fok veya kimyasal a\u015f\u0131nma ise RSiC'yi belirtin<\/span><\/h3>\n

H\u0131zl\u0131 pi\u015firme d\u00f6ng\u00fcleri i\u00e7in f\u0131r\u0131n donan\u0131m\u0131.<\/span><\/strong> 1450\u00b0C\u2019nin \u00fczerinde tekrar tekrar h\u0131zl\u0131 \u0131s\u0131nma ve so\u011fumaya maruz kalan ince ayar plakalar\u0131, kiri\u015fler ve silindirler. RSiC sinterleme s\u0131ras\u0131nda meydana gelen d\u00fc\u015f\u00fck b\u00fcz\u00fclme, \u015funlar\u0131 m\u00fcmk\u00fcn k\u0131lar: <\/span>\u00e7arp\u0131lmayan ince cidarl\u0131 profiller<\/span><\/strong>, ve a\u00e7\u0131k g\u00f6zeneklilik, daha yo\u011fun bir cisimde \u00e7atlaklara yol a\u00e7acak termal gerilimi telafi eder<\/span>.<\/span><\/p>\n

Br\u00fcl\u00f6r nozullar\u0131 ve radyant borular.<\/span><\/strong> RSiC br\u00fcl\u00f6r nozullar\u0131, serbest silikon zay\u0131f faz haline geldi\u011finde reaksiyonla ba\u011flanm\u0131\u015f SiC\u2019de meydana gelen \u00e7atlamaya maruz kalmadan ~1650\u20131700 \u00b0C\u2019ye kadar oksidasyona ve termal d\u00f6ng\u00fclere dayanabildikleri i\u00e7in mekik, t\u00fcnel ve makaral\u0131 f\u0131r\u0131nlarda tercih edilmektedir.<\/span>.<\/span><\/p>\n

Yar\u0131 iletken ve fotovoltaik f\u0131r\u0131n bile\u015fenleri.<\/span><\/strong> Y\u00fcksek safl\u0131kta RSiC \u015fu ama\u00e7larla kullan\u0131l\u0131r: <\/span>LPCVD kanatlar\u0131, tekneleri ve dif\u00fczyon f\u0131r\u0131n\u0131 i\u00e7 par\u00e7alar\u0131<\/span><\/strong> metal kirlenmesinin ve partik\u00fcl olu\u015fumunun kontrol edilmesi gereken yerlerde. Burada belirleyici fakt\u00f6r, yo\u011funluk de\u011fil, sinterleme yard\u0131mc\u0131 maddelerinin kullan\u0131lmamas\u0131d\u0131r<\/span>.<\/span><\/p>\n

Atmosferik f\u0131r\u0131nlarda bile\u015fen koruma t\u00fcpleri.<\/span><\/strong> RSiC\u2019nin ba\u011flant\u0131l\u0131 g\u00f6zeneklili\u011fi, \u00e7o\u011fu f\u0131r\u0131n atmosferinde kimyasal inertli\u011fi olumsuz etkilemez ve malzeme, boru duvar\u0131 boyunca olu\u015fan termal gradyanlara, par\u00e7alanma olmadan dayan\u0131r.<\/span><\/p>\n

Gereksinim yo\u011funluk, s\u0131zd\u0131rmazl\u0131k veya maksimum mukavemet oldu\u011funda RSiC'yi belirtmeyin<\/span><\/h3>\n

Par\u00e7a vakum s\u0131zd\u0131rmazl\u0131\u011f\u0131 sa\u011flamas\u0131 gerekiyorsa, al\u0131\u015ft\u0131r\u0131lm\u0131\u015f bir a\u015f\u0131nma y\u00fczeyi i\u00e7ermesi gerekiyorsa veya yap\u0131sal bir y\u00fck ta\u015f\u0131mas\u0131 gerekiyorsa, <\/span>SSiC\u2019nin daha y\u00fcksek yo\u011funlu\u011fu ve mukavemeti<\/span><\/strong> belirleyici \u00f6zellikler ise, RSiC yanl\u0131\u015f kalitedir. Benzer \u015fekilde, par\u00e7a b\u00fcy\u00fck, geometrik olarak karma\u015f\u0131k ve ~1400\u00b0C\u2019nin alt\u0131ndaki s\u0131cakl\u0131klarda maliyet a\u00e7\u0131s\u0131ndan hassas ise, <\/span>SiSiC\/RBSiC<\/span><\/strong> genellikle daha uygun bir se\u00e7imdir \u2014 i\u00e7indeki serbest silikon g\u00f6zeneklili\u011fi doldurur ve y\u00fcksek s\u0131cakl\u0131k ve kimyasal s\u0131n\u0131rlamalar pahas\u0131na, neredeyse nihai \u015fekle yak\u0131n \u00fcretim yap\u0131lmas\u0131na olanak tan\u0131r<\/span>.<\/span><\/p>\n

Al\u0131c\u0131lar\u0131n teklif talebi (RFQ) g\u00f6ndermeden \u00f6nce ger\u00e7ekten sorduklar\u0131 sorular\u0131n yan\u0131tlar\u0131<\/span><\/h2>\n

RSiC, SSiC ile ayn\u0131 \u015fey midir?<\/span><\/strong> Hay\u0131r. SSiC, sinterleme yard\u0131mc\u0131 maddeleriyle bas\u0131n\u00e7s\u0131z olarak sinterlenir ve yo\u011fundur. RSiC ise katk\u0131 maddesi kullan\u0131lmadan yeniden kristalle\u015ftirilir ve <\/span>tasar\u0131m gere\u011fi a\u00e7\u0131k g\u00f6zeneklilik<\/span><\/strong>. Bunlar, farkl\u0131 \u00f6zellik dengelerine sahip farkl\u0131 malzemelerdir; e\u015fanlaml\u0131lar de\u011fildir<\/span>.<\/span><\/p>\n

RSiC, havada 1650 \u00b0C'nin \u00fczerinde kullan\u0131labilir mi?<\/span><\/strong> Havada pratik s\u00fcrekli s\u0131n\u0131r yakla\u015f\u0131k olarak <\/span>1600\u20131650 \u00b0C<\/span><\/strong>. Baz\u0131 tedarik\u00e7iler, k\u0131sa s\u00fcreli kullan\u0131m veya inert atmosfer ko\u015fullar\u0131 i\u00e7in daha y\u00fcksek de\u011ferler belirtmektedir; \u015funu isteyin: <\/span>ortam ve s\u00fcre<\/span><\/strong> herhangi bir daha y\u00fcksek talebin arkas\u0131nda.<\/span><\/p>\n

G\u00f6zeneklilik, par\u00e7an\u0131n daha zay\u0131f ya da kalitesinin daha d\u00fc\u015f\u00fck oldu\u011fu anlam\u0131na m\u0131 gelir?<\/span><\/strong> Bu, malzemenin <\/span>termal \u015fok ve safl\u0131k a\u00e7\u0131s\u0131ndan optimize edilmi\u015f, maksimum mukavemet a\u00e7\u0131s\u0131ndan de\u011fil<\/span><\/strong>. Uygulaman\u0131zda bu \u00f6zelliklere ihtiya\u00e7 duyulmuyorsa, daha yo\u011fun bir s\u0131n\u0131f sizin i\u00e7in daha uygun olabilir. G\u00f6zeneklilik, bir teknik \u00f6zellik de\u011fi\u015fkenidir; bir kusur tan\u0131m\u0131 de\u011fildir.<\/span><\/p>\n

Kimyasal uygulamalarda RSiC ile SiSiC\/RBSiC aras\u0131ndaki fark nedir?<\/span><\/strong> SiSiC\/RBSiC \u015funlar\u0131 i\u00e7erir: <\/span>serbest silikon<\/span><\/strong>, bu da ~1400\u00b0C\u2019nin \u00fczerindeki uzun s\u00fcreli kullan\u0131m\u0131 k\u0131s\u0131tlar ve g\u00fc\u00e7l\u00fc alkali ile hidroflorik asit i\u00e7eren ortamlara kar\u015f\u0131 direnci azalt\u0131r. RSiC\u2019de serbest silikon ve cams\u0131 tane s\u0131n\u0131r\u0131 faz\u0131 bulunmaz; bu nedenle, <\/span>s\u0131cakl\u0131kta kimyasal inertlik<\/span><\/strong> bir gerekliliktir<\/span>.<\/span><\/p>\n

RSiC par\u00e7alar\u0131, sadece standart levha ve borularla s\u0131n\u0131rl\u0131 kalmay\u0131p, \u00f6zel geometrilere g\u00f6re de tedarik edilebilir mi?<\/span><\/strong> Evet, yeniden kristalle\u015fme s\u00fcrecinin geometrik s\u0131n\u0131rlar\u0131 dahilinde. RSiC, \u015fu ama\u00e7lara son derece uygundur: <\/span>ince cidarl\u0131, geni\u015f tabanl\u0131 \u015fekiller<\/span><\/strong> \u00f6rne\u011fin setter plakalar\u0131 ve kiri\u015fler gibi; ancak son derece kal\u0131n kesitler veya karma\u015f\u0131k i\u00e7 bo\u015fluklar, reaksiyonla birle\u015ftirilmi\u015f bir kalitede daha ekonomik bir \u015fekilde \u00fcretilebilir. \u00dcretilebilirlik de\u011ferlendirmesi i\u00e7in bir \u00e7izim ve \u00e7al\u0131\u015fma ko\u015fullar\u0131n\u0131 payla\u015f\u0131n.<\/span><\/p>","protected":false},"excerpt":{"rendered":"

Recrystallized Silicon Carbide (RSiC \/ RSC) \u2014 for Kiln Furniture, Burner Nozzles & High-Temperature Structural Parts If your furnace cycle runs above 1450\u00b0C, involves rapid heating\/cooling, and a sintering aid or free-silicon phase would become the weak link \u2014 this is the material page you should read before you specify. RSiC is not \u201canother SiC… <\/p>","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"neve_meta_sidebar":"","neve_meta_container":"","neve_meta_enable_content_width":"off","neve_meta_content_width":70,"neve_meta_title_alignment":"","neve_meta_author_avatar":"","neve_post_elements_order":"","neve_meta_disable_header":"","neve_meta_disable_footer":"","neve_meta_disable_title":"","ngg_post_thumbnail":0,"footnotes":""},"categories":[23],"tags":[],"class_list":["post-735","post","type-post","status-publish","format-standard","hentry","category-recrystallized-silicon-carbide"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/735","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/comments?post=735"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/735\/revisions"}],"predecessor-version":[{"id":736,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/735\/revisions\/736"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/media?parent=735"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/categories?post=735"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/tags?post=735"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}