{"id":602,"date":"2024-05-12T21:52:47","date_gmt":"2024-05-12T13:52:47","guid":{"rendered":"https:\/\/siliconcarbide.net\/?p=602"},"modified":"2024-05-12T21:57:13","modified_gmt":"2024-05-12T13:57:13","slug":"silisyum-karbur-tanimi","status":"publish","type":"post","link":"https:\/\/siliconcarbide.net\/tr\/silicon-carbide-definition\/","title":{"rendered":"Silisyum Karb\u00fcr Tan\u0131m\u0131"},"content":{"rendered":"

Silisyum karb\u00fcr (SiC), a\u015f\u0131nd\u0131r\u0131c\u0131 ve a\u015f\u0131nmaya dayan\u0131kl\u0131 bir malzeme olarak, refrakterlerde ve seramik uygulamalar\u0131nda yayg\u0131n olarak kullan\u0131lan ve ayn\u0131 zamanda \u0131\u015f\u0131k yayan diyotlar (LED) i\u00e7in yar\u0131 iletken substrat olan sert, sentetik olarak \u00fcretilen kristal bir bile\u015fiktir.<\/p>\n

EFM yar\u0131 iletkenleri ayr\u0131ca elektrikli ara\u00e7 (EV) g\u00fc\u00e7 cihazlar\u0131nda bulunanlar gibi y\u00fcksek voltajl\u0131 ortamlarda geleneksel silikon yar\u0131 iletkenleri geride b\u0131rakarak voltaj ve ak\u0131m kay\u0131plar\u0131n\u0131 en aza indirerek \u00fcst\u00fcn performans sa\u011flaman\u0131n yan\u0131 s\u0131ra boyut ve a\u011f\u0131rl\u0131\u011f\u0131 azalt\u0131rken temel pil y\u00f6netimi bile\u015fenlerini k\u00fc\u00e7\u00fclt\u00fcp hafifletir.<\/p>\n

Silisyum Karb\u00fcr<\/h2>\n

Silisyum karb\u00fcr, silisyum ve karbondan olu\u015fan inert bir seramik bile\u015fi\u011fidir. Mohs sertlik derecesi 9 ile bor karb\u00fcr (9,5) ve elmas\u0131n (10) ard\u0131ndan \u00fc\u00e7\u00fcnc\u00fc s\u0131rada yer al\u0131r. Silisyum karb\u00fcr, kimyasal olarak inert kal\u0131rken y\u00fcksek mekanik dayan\u0131kl\u0131l\u0131\u011fa sahiptir; bu da onu tak\u0131m tezgahlar\u0131 gibi sert y\u00fczey koruma uygulamalar\u0131 i\u00e7in m\u00fckemmel k\u0131lar.<\/p>\n

Saf karbon nanot\u00fcpler, silikon ba\u011flar\u0131yla kovalent olarak birbirine ba\u011flanm\u0131\u015f d\u00f6rt karbon tetrahedra halinde d\u00fczenlenmi\u015f d\u00f6rt karbon atomu i\u00e7erir. Bu d\u00fczenleme, \u00e7e\u015fitli kristal yap\u0131lar ve fazlar ile polimorfizme izin verir.<\/p>\n

SiC'nin kristal yap\u0131s\u0131, elektronik uygulamalar i\u00e7in gerekli olan geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken (WBG) \u00f6zellikleri de dahil olmak \u00fczere \u00fcst\u00fcn elektriksel \u00f6zellikleriyle sonu\u00e7lan\u0131r. Daha geni\u015f bir bant aral\u0131\u011f\u0131 elektronlar\u0131n y\u00f6r\u00fcngeden daha h\u0131zl\u0131 \u00e7\u0131kmas\u0131n\u0131 sa\u011flayarak geleneksel silikon cihazlara k\u0131yasla daha y\u00fcksek frekanslara ve daha h\u0131zl\u0131 i\u015flemlere yol a\u00e7ar.<\/p>\n

Temel malzeme olarak silikon, n tipi yar\u0131 iletkenler \u00fcretmek i\u00e7in nitrojen, fosfor, galyum, bor ve al\u00fcminyum ile katk\u0131lanabilir. Ayr\u0131ca, silikonsuz transist\u00f6rler maliyeti ve g\u00fc\u00e7 t\u00fcketimini 40% kadar azaltabilir.<\/p>\n

Silisyum Karb\u00fcr (SiC) 300 derece C'ye kadar \u00e7al\u0131\u015fabilir, bu da onu elektrikli ara\u00e7 motorlar\u0131 gibi y\u00fcksek s\u0131cakl\u0131k ortamlar\u0131ndaki uygulamalar i\u00e7in m\u00fckemmel bir malzeme se\u00e7imi haline getirir. SiC, a\u011f\u0131rl\u0131k, maliyet ve karma\u015f\u0131kl\u0131k ekleyen aktif so\u011futma sistemlerine olan ihtiyac\u0131 ortadan kald\u0131rabilir - bu da bu ara\u00e7lar i\u00e7in daha fazla menzil ve daha h\u0131zl\u0131 \u015farj s\u00fcreleri anlam\u0131na gelir.<\/p>\n

Yar\u0131 \u0130letken<\/h2>\n

Silisyum karb\u00fcr, elektronikte olduk\u00e7a kullan\u0131\u015fl\u0131 olmas\u0131n\u0131 sa\u011flayan benzersiz elektriksel \u00f6zellikleriyle uzun zamand\u0131r tan\u0131nmaktad\u0131r. \u0130letkenler (bak\u0131r elektrik kablolar\u0131 gibi) ve yal\u0131tkanlar (bu kablolar\u0131 kaplayan polimer yal\u0131t\u0131m) gibi davranmak aras\u0131nda de\u011fi\u015fen yar\u0131 iletkenler, entegre devreler, diyotlar ve transist\u00f6rler gibi belirli ko\u015fullar alt\u0131nda elektri\u011fi ileten ayr\u0131 elektronik bile\u015fenler olu\u015fturmak i\u00e7in kullan\u0131lan yar\u0131 iletken malzemeleri olu\u015fturur; iletkenlikleri elektrik ak\u0131mlar\u0131, elektromanyetik alanlar veya \u0131\u015f\u0131k uyar\u0131m\u0131 yoluyla uyar\u0131larak bile de\u011fi\u015ftirilebilir.<\/p>\n

Silisyum karb\u00fcr, son derece geni\u015f bir bant aral\u0131\u011f\u0131na sahip olmas\u0131yla geleneksel yar\u0131 iletkenlerden ayr\u0131l\u0131r. Bu, elektronlar\u0131 valans band\u0131ndan iletim band\u0131na ta\u015f\u0131mak i\u00e7in \u00e7ok daha fazla enerji gerektirdi\u011fi anlam\u0131na gelir; sonu\u00e7 olarak, silisyum karb\u00fcr \u00e7ok d\u00fc\u015f\u00fck g\u00fc\u00e7 kay\u0131plar\u0131na sahiptir - elektrikli ara\u00e7 \u00e7eki\u015f invert\u00f6rleri gibi y\u00fcksek voltaj uygulamalar\u0131 i\u00e7in kullan\u0131ld\u0131\u011f\u0131nda paha bi\u00e7ilmez bir niteliktir.<\/p>\n

Silisyum karb\u00fcr, patlatma kumlar\u0131 ve karborundum bask\u0131 ara\u00e7lar\u0131ndan termal, elektrik ve makine m\u00fchendisli\u011fi uygulamalar\u0131na kadar end\u00fcstri ve akademide \u00e7e\u015fitli kullan\u0131mlar i\u00e7in uzun s\u00fcredir kullan\u0131lmaktad\u0131r. Ancak son zamanlarda, d\u00fc\u015f\u00fck termal genle\u015fme oranlar\u0131, y\u00fcksek mukavemet-sertlik oran\u0131 ve d\u00fc\u015fmanca ortamlara dayanma kabiliyeti nedeniyle talep h\u0131zla artm\u0131\u015ft\u0131r.<\/p>\n

Seramik<\/h2>\n

Silikon ve karbon bir araya gelerek m\u00fckemmel mekanik, kimyasal ve termal \u00f6zelliklere sahip \u00e7ekici bir malzeme \u00fcretir. Mohs \u00f6l\u00e7e\u011fine g\u00f6re elmas\u0131n iki kat\u0131 kadar olan a\u015f\u0131r\u0131 sertli\u011finin yan\u0131 s\u0131ra di\u011fer refrakter malzemelere g\u00f6re \u00fcst\u00fcn termal \u015fok direncine sahiptir.<\/p>\n

Seramik, f\u0131r\u0131nlanmad\u0131\u011f\u0131nda son derece esnek olan ancak f\u0131r\u0131nlama i\u015flemleri s\u0131ras\u0131nda \u00f6nemli \u00f6l\u00e7\u00fcde sertle\u015fen inorganik, metalik olmayan bir malzemeyi ifade eder. Seramikler \u00e7e\u015fitli kategorileri kapsar; \u00f6rne\u011fin:<\/p>\n

Seramikler \u00f6ncelikle \u0131s\u0131ya, kimyasal a\u015f\u0131nmaya ve korozyona kar\u015f\u0131 diren\u00e7 sa\u011flayan inorganik malzemeler olan refrakterler olarak kullan\u0131l\u0131r. Seramikler her t\u00fcrl\u00fc \u015fekil ve renkte \u00fcretilir ve farkl\u0131 sekt\u00f6rlerde kullan\u0131l\u0131r. Biyoseramiklerin \u00f6nemli kullan\u0131m alanlar\u0131 aras\u0131nda yang\u0131ndan korunma, s\u00fcper iletkenler ve h\u00fccrelerden biyolojik tepkilerin uyar\u0131lmas\u0131 yer almaktad\u0131r. Biyoaktif seramikler ya kendili\u011finden biyoaktif olabilir ya da y\u00fczey i\u015flemleri veya seramik g\u00f6zeneklerin farmas\u00f6tik olarak aktif maddelerle doldurulmas\u0131 yoluyla bu hale getirilebilir. Silisyum karb\u00fcr, a\u011f\u0131rl\u0131k, karma\u015f\u0131kl\u0131k ve maliyet ekleyen aktif so\u011futma sistemlerine ihtiya\u00e7 duymadan y\u00fcksek s\u0131cakl\u0131klara dayan\u0131rken s\u00fcrt\u00fcnmeyi ve emisyonlar\u0131 \u00f6nemli \u00f6l\u00e7\u00fcde azaltan otomobil fren diskleri i\u00e7in yayg\u0131n olarak kullan\u0131lmaktad\u0131r. Ayr\u0131ca, kullan\u0131m\u0131 bir\u00e7ok a\u015f\u0131nd\u0131r\u0131c\u0131 ve kesici aletin temelini olu\u015fturur.<\/p>\n

Otomotiv<\/h2>\n

Silisyum karb\u00fcr (SiC) Mohs \u00f6l\u00e7e\u011fine g\u00f6re dokuzuncu s\u0131rada, al\u00fcmina (9) ve elmas (10) aras\u0131nda yer alan son derece sert bir malzemedir. Silisyum karb\u00fcr ilk olarak 1891 y\u0131l\u0131nda Amerikal\u0131 mucit Edward Acheson taraf\u0131ndan yapay elmas \u00fcretmeye \u00e7al\u0131\u015f\u0131rken yapay olarak sentezlenmi\u015f, ancak bunun yerine elektrikle \u0131s\u0131t\u0131lan karbon ve al\u00fcmina eriyi\u011finde end\u00fcstriyel a\u015f\u0131nd\u0131r\u0131c\u0131lar i\u00e7in toz haline getirilmi\u015f k\u00fc\u00e7\u00fck siyah SiC kristalleri ke\u015ffetmi\u015ftir. Nobel \u00f6d\u00fcll\u00fc kimyager Henri Moissan 1905 y\u0131l\u0131nda bu bile\u015fi\u011fi do\u011fal olarak mozanit ad\u0131 verilen \u015feffaf bir mineral olarak g\u00f6zlemlemi\u015ftir.<\/p>\n

Silisyum karb\u00fcr\u00fcn benzersiz atomik yap\u0131s\u0131 ve yar\u0131 iletken \u00f6zellikleri onu diyotlar, transist\u00f6rler ve g\u00fc\u00e7 cihazlar\u0131 gibi elektronik uygulamalar i\u00e7in ideal hale getirmektedir. Geleneksel silikona g\u00f6re on kat daha fazla voltaj direncine sahiptir ve 1000V'u a\u015fan sistemlerde daha da iyi performans g\u00f6stererek elektrikli ara\u00e7 (EV) \u015farj istasyonlar\u0131 ve enerji y\u00f6netim sistemleriyle ili\u015fkili y\u00fcksek voltaj taleplerini kar\u015f\u0131lamak i\u00e7in ideal malzeme haline gelir.<\/p>\n

SiC, anahtarlama verimlili\u011fini \u00f6nemli \u00f6l\u00e7\u00fcde art\u0131rabilir ve ayn\u0131 zamanda DC-DC d\u00f6n\u00fc\u015ft\u00fcr\u00fcc\u00fcler, yerle\u015fik \u015farj cihazlar\u0131 ve pil y\u00f6netim sistemleri gibi temel EV bile\u015fenlerinin boyutunu ve a\u011f\u0131rl\u0131\u011f\u0131n\u0131 azaltmaya yard\u0131mc\u0131 olabilir. Bu geli\u015fmeler, emisyonsuz s\u00fcr\u00fc\u015f\u00fc kitlesel benimsemeye yakla\u015ft\u0131rabilir. GlobalData analizi, yenilik\u00e7i \u00e7\u00f6z\u00fcmler i\u00e7in silisyum karb\u00fcr kullanan teknoloji sat\u0131c\u0131lar\u0131 ve k\u00f6kl\u00fc otomotiv \u015firketlerinden yeni kurulan \u015firketlere kadar 10'dan fazla \u015firketi tan\u0131mlamaktad\u0131r.<\/p>\n

\"Silisyum<\/a><\/p>","protected":false},"excerpt":{"rendered":"

Silicon carbide (SiC) is a hard, synthetically produced crystalline compound widely used as an abrasive and wear-resistant material, in refractories and ceramics applications, as well as being the semiconductor substrate for light emitting diodes (LED). EFM semiconductors also outshone traditional silicon semiconductors in high-voltage environments like those found in electric vehicle (EV) power devices, providing […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-602","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/602","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/comments?post=602"}],"version-history":[{"count":3,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/602\/revisions"}],"predecessor-version":[{"id":606,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/602\/revisions\/606"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/media?parent=602"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/categories?post=602"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/tags?post=602"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}