Sinterleme yard\u0131mc\u0131lar\u0131 olarak C ve B4C elementleri i\u00e7eren silisyum karb\u00fcr serami\u011fin sinterlenmesi kat\u0131 faz sinterlemesidir ve sinterleme i\u015flemi esas olarak dif\u00fczyon mekanizmas\u0131 taraf\u0131ndan kontrol edilir ve optimum sinterleme s\u0131cakl\u0131\u011f\u0131 2150\u00b0C'dir. Sinterleme s\u00fcreci basit ve kontrol\u00fc kolayd\u0131r. Sinterlenmi\u015f silisyum karb\u00fcr sinterleme i\u015fleminin uygun C + B4C sinterleme katk\u0131 maddelerinin i\u00e7eri\u011fini ekleyin, basit ve kontrol\u00fc kolayd\u0131r, k\u00fct\u00fc\u011fe k\u0131yasla seramik sinterleme yakla\u015f\u0131k 30% hacim b\u00fcz\u00fclmesine sahiptir, daha y\u00fcksek bir yo\u011funluk, silisyum karb\u00fcr \u00f6zel seramiklerin mekanik \u00f6zelliklerini elde edebilirsiniz. \u015eu anda, yayg\u0131n olarak kullan\u0131lan sinterleme katk\u0131 maddeleri B4C + C, BN + C, BP (bor fosfit) + C, AI + C, AIN + C ve benzerleridir. C + B4C SiC bas\u0131n\u00e7s\u0131z sinterleme i\u015fleminin uygun i\u00e7eri\u011fini ekleyin, bu t\u00fcr sinterlenmi\u015f sic i\u00e7in i\u015flem basittir, kontrol\u00fc kolayd\u0131r, malzeme yo\u011funlu\u011fu daha y\u00fcksektir, maksimum 3.169 \/ cm3 yo\u011funluk (98.75% ba\u011f\u0131l yo\u011funluk); mekanik \u00f6zellikler daha iyidir, maksimum 550MPa bas\u0131n\u00e7 dayan\u0131m\u0131.
\n Silisyum karb\u00fcr hammaddesi tercihen D50 de\u011feri 0,5 - 0,8 mikron tekli mikro tozdur. Genellikle 20 m3\/g spesifik y\u00fczey alan\u0131na sahip kimyasal olarak i\u015flenmi\u015f ye\u015fil silisyum karb\u00fcr mikronlar\u0131d\u0131r. Oksijen i\u00e7eri\u011fi m\u00fcmk\u00fcn oldu\u011funca d\u00fc\u015f\u00fck olmal\u0131d\u0131r; ayr\u0131ca, eklenen B miktar\u0131 0,5% - 1,5% civar\u0131nda se\u00e7ilmelidir, eklenen C miktar\u0131 ise SiC tozundaki oksijen i\u00e7eri\u011fi seviyesine ba\u011fl\u0131d\u0131r. Kimyasal bile\u015fim SIC>99%, F-C<0.1, Si+SiO2<0.1, Fe2O3<0.08. Par\u00e7ac\u0131k \u015fekli ve boyut bile\u015fimi, en kompakt istiflemeyi elde etmek i\u00e7in par\u00e7ac\u0131k \u015fekli neredeyse k\u00fcreseldir.
\n B4C ve C ilavesi, daha y\u00fcksek sinterleme s\u0131cakl\u0131klar\u0131 gerektiren kat\u0131 faz sinterleme kategorisine aittir.SiC sinterleme itici g\u00fcc\u00fc: toz partik\u00fcllerinin y\u00fczey enerjisi (Eb) ile polikristalin sinterlenmi\u015f g\u00f6vdenin tanelerinin yalpalama y\u00fczeyi (Es) aras\u0131ndaki farkt\u0131r ve bu da sistemin serbest enerjisinde bir azalmaya yol a\u00e7ar. Uygun miktarda B4C ile katk\u0131lanan B4C, sinterleme s\u0131ras\u0131nda SiC tane s\u0131n\u0131r\u0131nda bulunur ve k\u0131smen SiC ile kat\u0131 bir \u00e7\u00f6zelti olu\u015fturur, b\u00f6ylece SiC'nin tane s\u0131n\u0131r\u0131 kapasitesini azalt\u0131r. Orta miktarda serbest C katk\u0131s\u0131 kat\u0131 faz sinterleme i\u00e7in faydal\u0131d\u0131r \u00e7\u00fcnk\u00fc SiC y\u00fczeyi genellikle oksitlenir, bu da az miktarda Si02 olu\u015fumuna neden olur ve orta miktarda C ilavesi, SiC y\u00fczeyindeki Si02 filminin azalmas\u0131n\u0131n giderilmesine yard\u0131mc\u0131 olur, b\u00f6ylece y\u00fczey enerjisi Eb artar.
\n SiC sistemi 1.013x105Pa'da ve 1880\u00b0C'den daha y\u00fcksek bir s\u0131cakl\u0131kta ayr\u0131\u015fmaya ve s\u00fcblimle\u015fmeye u\u011frar. SiC sistemi Si, Si2, Si3, C, C2, C3, C4, C5, SiC, Si2C, SiC2 ve benzeri gaz fazlar\u0131n\u0131 i\u00e7erir ve s\u0131cakl\u0131k fark\u0131 SiC kristallerinin b\u00fcy\u00fcmesi s\u0131ras\u0131nda s\u00fcblimasyon s\u00fcrecinin temel itici g\u00fcc\u00fcd\u00fcr ve t\u00fcm s\u00fcrece k\u00fctle ta\u015f\u0131n\u0131m\u0131 hakimdir. SiC sistemindeki bu \u00e7e\u015fitli gaz fazlar\u0131 dif\u00fczyon yoluyla SiC kristal anas\u0131 \u00fczerinde birle\u015ferek SiC kristal partik\u00fcllerinin b\u00fcy\u00fcmesine yol a\u00e7ar. C+B4C sinterleme yard\u0131mc\u0131 sistemi numuneleri i\u00e7in, a\u011f\u0131rl\u0131kl\u0131 olarak kat\u0131 faz sinterleme nedeniyle gerekli sinterleme s\u0131cakl\u0131\u011f\u0131 daha y\u00fcksektir ve argon yakla\u015f\u0131k 1300 \u00b0C'de koruyucu atmosfer olarak ge\u00e7irilir, \u00e7\u00fcnk\u00fc argon 1300 \u00b0C'nin \u00fczerindeki y\u00fcksek s\u0131cakl\u0131klarda SiC'nin ayr\u0131\u015fmas\u0131n\u0131 azaltmak i\u00e7in uygundur. SiC sinterlenmi\u015f g\u00f6vdenin kalitesini \u00f6l\u00e7mek i\u00e7in iki gerekli ko\u015ful vard\u0131r: m\u00fcmk\u00fcn oldu\u011funca yo\u011fun d\u00fc\u015f\u00fck g\u00f6zeneklilik; m\u00fcmk\u00fcn oldu\u011funca k\u00fc\u00e7\u00fck tane.<\/p>","protected":false},"excerpt":{"rendered":"
The sintering of silicon carbide ceramic containing C and B4C elements as sintering aids is solid-phase sintering, and the sintering process is mainly controlled by the diffusion mechanism, with an optimum sintering temperature of 2150\u00b0C. The sintering process is simple and easy to control. Add the appropriate content of C + B4C sintering additives […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-574","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/574","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/comments?post=574"}],"version-history":[{"count":3,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/574\/revisions"}],"predecessor-version":[{"id":577,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/posts\/574\/revisions\/577"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/media?parent=574"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/categories?post=574"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/tr\/wp-json\/wp\/v2\/tags?post=574"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}