{"id":602,"date":"2024-05-12T21:52:47","date_gmt":"2024-05-12T13:52:47","guid":{"rendered":"https:\/\/siliconcarbide.net\/?p=602"},"modified":"2024-05-12T21:57:13","modified_gmt":"2024-05-12T13:57:13","slug":"definicia-karbidu-kremika","status":"publish","type":"post","link":"https:\/\/siliconcarbide.net\/sk\/silicon-carbide-definition\/","title":{"rendered":"Defin\u00edcia karbidu krem\u00edka"},"content":{"rendered":"

Karbid krem\u00edka (SiC) je tvrd\u00e1, synteticky vyr\u00e1ban\u00e1 kry\u0161talick\u00e1 zl\u00fa\u010denina, ktor\u00e1 sa \u0161iroko pou\u017e\u00edva ako abraz\u00edvny materi\u00e1l odoln\u00fd proti opotrebovaniu, v \u017eiaruvzdorn\u00fdch materi\u00e1loch a keramike, ako aj ako polovodi\u010dov\u00fd substr\u00e1t pre sveteln\u00e9 di\u00f3dy (LED).<\/p>\n

Polovodi\u010de EFM tie\u017e prekonali tradi\u010dn\u00e9 krem\u00edkov\u00e9 polovodi\u010de vo vysokonap\u00e4\u0165ov\u00fdch prostrediach, ak\u00e9 sa nach\u00e1dzaj\u00fa v nap\u00e1jac\u00edch zariadeniach elektrick\u00fdch vozidiel (EV), a poskytli vynikaj\u00faci v\u00fdkon minimalizovan\u00edm str\u00e1t nap\u00e4tia a pr\u00fadu, ako aj zmen\u0161en\u00edm a od\u013eah\u010den\u00edm z\u00e1kladn\u00fdch komponentov riadenia bat\u00e9rie pri s\u00fa\u010dasnom zn\u00ed\u017een\u00ed ve\u013ekosti a hmotnosti.<\/p>\n

Karbid krem\u00edka<\/h2>\n

Karbid krem\u00edka je inertn\u00e1 keramick\u00e1 zl\u00fa\u010denina zlo\u017een\u00e1 z krem\u00edka a uhl\u00edka. S tvrdos\u0165ou 9 pod\u013ea Mohsa je na tre\u0165om mieste za karbidom b\u00f3ru (9,5) a diamantom (10). Karbid krem\u00edka m\u00e1 vysok\u00fa mechanick\u00fa odolnos\u0165 a z\u00e1rove\u0148 zost\u00e1va chemicky inertn\u00fd, tak\u017ee je ide\u00e1lny na aplik\u00e1cie ochrany tvrd\u00fdch povrchov, ako s\u00fa obr\u00e1bacie stroje.<\/p>\n

\u010cist\u00e9 uhl\u00edkov\u00e9 nanor\u00farky obsahuj\u00fa \u0161tyri at\u00f3my uhl\u00edka usporiadan\u00e9 do \u0161tyroch uhl\u00edkov\u00fdch tetra\u00e9drov, kovalentne spojen\u00fdch krem\u00edkov\u00fdmi v\u00e4zbami. Toto usporiadanie umo\u017e\u0148uje polymorfizmus s r\u00f4znymi kry\u0161t\u00e1lov\u00fdmi \u0161trukt\u00farami a f\u00e1zami.<\/p>\n

Kry\u0161talick\u00e1 \u0161trukt\u00fara SiC m\u00e1 za n\u00e1sledok jeho vynikaj\u00face elektrick\u00e9 vlastnosti vr\u00e1tane vlastnost\u00ed polovodi\u010da so \u0161irokou p\u00e1smovou medzerou (WBG), ktor\u00e9 s\u00fa nevyhnutn\u00e9 pre elektronick\u00e9 aplik\u00e1cie. V\u00e4\u010d\u0161ia p\u00e1smov\u00e1 medzera umo\u017e\u0148uje elektr\u00f3nom r\u00fdchlej\u0161ie op\u00fa\u0161\u0165a\u0165 obe\u017en\u00fa dr\u00e1hu, \u010do vedie k vy\u0161\u0161\u00edm frekvenci\u00e1m a r\u00fdchlej\u0161\u00edm oper\u00e1ci\u00e1m ako v pr\u00edpade be\u017en\u00fdch krem\u00edkov\u00fdch zariaden\u00ed.<\/p>\n

Krem\u00edk ako z\u00e1kladn\u00fd materi\u00e1l m\u00f4\u017ee by\u0165 dopovan\u00fd dus\u00edkom, fosforom, g\u00e1liom, b\u00f3rom a hlin\u00edkom na v\u00fdrobu polovodi\u010dov typu n. Okrem toho m\u00f4\u017eu tranzistory bez krem\u00edka zn\u00ed\u017ei\u0165 n\u00e1klady a spotrebu energie a\u017e o 40%.<\/p>\n

Karbid krem\u00edka (SiC) m\u00f4\u017ee pracova\u0165 pri teplote a\u017e 300 \u00b0C, \u010do z neho rob\u00ed vynikaj\u00faci materi\u00e1l pre aplik\u00e1cie vo vysokoteplotn\u00fdch prostrediach, ako s\u00fa motory elektrick\u00fdch vozidiel. SiC dok\u00e1\u017ee eliminova\u0165 potrebu akt\u00edvnych chladiacich syst\u00e9mov, ktor\u00e9 zvy\u0161uj\u00fa hmotnos\u0165, n\u00e1klady a zlo\u017eitos\u0165, \u010do znamen\u00e1 v\u00e4\u010d\u0161\u00ed dojazd a r\u00fdchlej\u0161ie nab\u00edjanie t\u00fdchto vozidiel.<\/p>\n

Polovodi\u010dov\u00e9<\/h2>\n

Karbid krem\u00edka je u\u017e dlho zn\u00e1my pre svoje jedine\u010dn\u00e9 elektrick\u00e9 vlastnosti, v\u010faka ktor\u00fdm je ve\u013emi u\u017eito\u010dn\u00fd v elektronike. Polovodi\u010de, ktor\u00e9 sa striedavo spr\u00e1vaj\u00fa ako vodi\u010de (ako meden\u00e9 elektrick\u00e9 vedenie) a izol\u00e1tory (polym\u00e9rov\u00e1 izol\u00e1cia pokr\u00fdvaj\u00faca tieto vodi\u010de), tvoria polovodi\u010dov\u00e9 materi\u00e1ly pou\u017e\u00edvan\u00e9 na kon\u0161trukciu integrovan\u00fdch obvodov, diskr\u00e9tnych elektronick\u00fdch s\u00fa\u010diastok, ako s\u00fa di\u00f3dy a tranzistory, ktor\u00e9 za ur\u010dit\u00fdch podmienok ved\u00fa elektrick\u00fd pr\u00fad; ich vodivos\u0165 mo\u017eno dokonca meni\u0165 stimul\u00e1ciou pomocou elektrick\u00e9ho pr\u00fadu, elektromagnetick\u00fdch pol\u00ed alebo svetelnej stimul\u00e1cie.<\/p>\n

Karbid krem\u00edka sa od tradi\u010dn\u00fdch polovodi\u010dov odli\u0161uje extr\u00e9mne \u0161irok\u00fdm p\u00e1smom. To znamen\u00e1, \u017ee na presun elektr\u00f3nov z valen\u010dn\u00e9ho p\u00e1sma do vodivostn\u00e9ho p\u00e1sma je potrebn\u00e1 ove\u013ea v\u00e4\u010d\u0161ia energia; karbid krem\u00edka sa preto m\u00f4\u017ee pochv\u00e1li\u0165 ve\u013emi n\u00edzkymi v\u00fdkonov\u00fdmi stratami - \u010do je neocenite\u013en\u00e1 vlastnos\u0165 pri pou\u017eit\u00ed vo vysokonap\u00e4\u0165ov\u00fdch aplik\u00e1ci\u00e1ch, ako s\u00fa trak\u010dn\u00e9 meni\u010de pre elektrick\u00e9 vozidl\u00e1.<\/p>\n

Karbid krem\u00edka sa u\u017e dlho vyu\u017e\u00edva na r\u00f4zne \u00fa\u010dely v priemysle a na akademickej p\u00f4de, od pieskovac\u00edch zrniek a karborundov\u00fdch tla\u010diarensk\u00fdch n\u00e1strojov a\u017e po tepeln\u00e9, elektrick\u00e9 a stroj\u00e1rske aplik\u00e1cie. V poslednom \u010dase v\u0161ak dopyt po \u0148om prudko vzr\u00e1stol v\u010faka jeho n\u00edzkej tepelnej roz\u0165a\u017enosti, vysok\u00e9mu pomeru pevnosti a tvrdosti a schopnosti odol\u00e1va\u0165 nepriazniv\u00fdm prostrediam.<\/p>\n

Keramick\u00e9<\/h2>\n

Kombin\u00e1ciou krem\u00edka a uhl\u00edka vznik\u00e1 atrakt\u00edvny materi\u00e1l s vynikaj\u00facimi mechanick\u00fdmi, chemick\u00fdmi a tepeln\u00fdmi vlastnos\u0165ami. M\u00f4\u017ee sa pochv\u00e1li\u0165 extr\u00e9mnou tvrdos\u0165ou - a\u017e dvojn\u00e1sobnou tvrdos\u0165ou diamantu na Mohsovej stupnici - ako aj vynikaj\u00facou odolnos\u0165ou vo\u010di tepeln\u00fdm \u0161okom v porovnan\u00ed s in\u00fdmi \u017eiaruvzdorn\u00fdmi materi\u00e1lmi.<\/p>\n

Keramika je anorganick\u00fd nekovov\u00fd materi\u00e1l, ktor\u00fd je v nevyp\u00e1lenom stave ve\u013emi pru\u017en\u00fd, ale po\u010das vypalovania v\u00fdrazne tvrdne. Keramika zah\u0155\u0148a r\u00f4zne kateg\u00f3rie, napr:<\/p>\n

Keramika sa pou\u017e\u00edva predov\u0161etk\u00fdm ako \u017eiaruvzdorn\u00fd materi\u00e1l, anorganick\u00fd materi\u00e1l, ktor\u00fd poskytuje odolnos\u0165 proti tepeln\u00e9mu a chemick\u00e9mu opotrebovaniu a kor\u00f3zii. Keramika m\u00e1 najr\u00f4znej\u0161ie tvary a farby a pou\u017e\u00edva sa v r\u00f4znych priemyseln\u00fdch odvetviach. Medzi d\u00f4le\u017eit\u00e9 pou\u017eitia biokeramiky patr\u00ed protipo\u017eiarna ochrana, supravodi\u010de a vyvol\u00e1vanie biologick\u00fdch reakci\u00ed buniek. Bioakt\u00edvna keramika m\u00f4\u017ee by\u0165 bu\u010f sama osebe bioakt\u00edvna, alebo sa m\u00f4\u017ee sta\u0165 bioakt\u00edvnou v\u010faka povrchovej \u00faprave alebo vyplneniu keramick\u00fdch p\u00f3rov farmaceuticky akt\u00edvnymi l\u00e1tkami. Karbid krem\u00edka sa \u0161iroko pou\u017e\u00edva na v\u00fdrobu brzdov\u00fdch kot\u00fa\u010dov automobilov, ktor\u00e9 v\u00fdrazne zni\u017euj\u00fa trenie a emisie a z\u00e1rove\u0148 odol\u00e1vaj\u00fa vysok\u00fdm teplot\u00e1m bez potreby akt\u00edvnych chladiacich syst\u00e9mov, ktor\u00e9 zvy\u0161uj\u00fa hmotnos\u0165, zlo\u017eitos\u0165 a n\u00e1klady. Okrem toho sa pou\u017e\u00edva ako z\u00e1klad mnoh\u00fdch br\u00fasnych a rezn\u00fdch n\u00e1strojov.<\/p>\n

Automobilov\u00fd priemysel<\/h2>\n

Karbid krem\u00edka (SiC) je extr\u00e9mne h\u00fa\u017eevnat\u00fd materi\u00e1l, ktor\u00fd je na Mohsovej stupnici na deviatom mieste, medzi oxidom hlinit\u00fdm (9) a diamantom (10). Karbid krem\u00edka prv\u00fdkr\u00e1t umelo syntetizoval americk\u00fd vyn\u00e1lezca Edward Acheson v roku 1891, ke\u010f sa pok\u00fa\u0161al vyrobi\u0165 umel\u00e9 diamanty, ale namiesto toho objavil vo svojej elektricky zahriatej tavenine uhl\u00edka a oxidu hlinit\u00e9ho mal\u00e9 \u010dierne kry\u0161t\u00e1liky SiC, ktor\u00e9 rozomlel do formy pr\u00e1\u0161ku na priemyseln\u00e9 br\u00fasiv\u00e1. Chemik Henri Moissan, nosite\u013e Nobelovej ceny, pozoroval t\u00fato zl\u00fa\u010deninu v roku 1905 ako prieh\u013eadn\u00fd miner\u00e1l s n\u00e1zvom moissanit.<\/p>\n

Jedine\u010dn\u00e1 at\u00f3mov\u00e1 \u0161trukt\u00fara karbidu krem\u00edka a jeho polovodi\u010dov\u00e9 vlastnosti ho predur\u010duj\u00fa na elektronick\u00e9 aplik\u00e1cie, ako s\u00fa di\u00f3dy, tranzistory a v\u00fdkonov\u00e9 zariadenia. M\u00e1 desa\u0165kr\u00e1t vy\u0161\u0161iu odolnos\u0165 vo\u010di nap\u00e4tiu ako tradi\u010dn\u00fd krem\u00edk a funguje e\u0161te lep\u0161ie v syst\u00e9moch s nap\u00e4t\u00edm vy\u0161\u0161\u00edm ako 1000 V, \u010do z neho rob\u00ed ide\u00e1lny materi\u00e1l na splnenie po\u017eiadaviek na vysok\u00e9 nap\u00e4tie spojen\u00e9 s nab\u00edjac\u00edmi stanicami pre elektrick\u00e9 vozidl\u00e1 a syst\u00e9mami riadenia energie.<\/p>\n

SiC m\u00f4\u017ee v\u00fdrazne zlep\u0161i\u0165 \u00fa\u010dinnos\u0165 sp\u00ednania a z\u00e1rove\u0148 pom\u00f4c\u0165 zn\u00ed\u017ei\u0165 ve\u013ekos\u0165 a hmotnos\u0165 z\u00e1kladn\u00fdch komponentov elektrick\u00fdch vozidiel, ako s\u00fa DC-DC meni\u010de, palubn\u00e9 nab\u00edja\u010dky a syst\u00e9my riadenia bat\u00e9ri\u00ed. Tieto pokroky by mohli pribl\u00ed\u017ei\u0165 bezemisn\u00fa jazdu k masov\u00e9mu roz\u0161\u00edreniu. Anal\u00fdza GlobalData identifikuje viac ako 10 spolo\u010dnost\u00ed - od dod\u00e1vate\u013eov technol\u00f3gi\u00ed a zaveden\u00fdch automobilov\u00fdch spolo\u010dnost\u00ed a\u017e po za\u010d\u00ednaj\u00face startupy - vyu\u017e\u00edvaj\u00facich karbid krem\u00edka na inovat\u00edvne rie\u0161enia.<\/p>\n

\"Defin\u00edcia<\/a><\/p>","protected":false},"excerpt":{"rendered":"

Silicon carbide (SiC) is a hard, synthetically produced crystalline compound widely used as an abrasive and wear-resistant material, in refractories and ceramics applications, as well as being the semiconductor substrate for light emitting diodes (LED). EFM semiconductors also outshone traditional silicon semiconductors in high-voltage environments like those found in electric vehicle (EV) power devices, providing […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-602","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/posts\/602","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/comments?post=602"}],"version-history":[{"count":3,"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/posts\/602\/revisions"}],"predecessor-version":[{"id":606,"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/posts\/602\/revisions\/606"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/media?parent=602"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/categories?post=602"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/sk\/wp-json\/wp\/v2\/tags?post=602"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}