{"id":552,"date":"2022-12-20T22:15:37","date_gmt":"2022-12-20T14:15:37","guid":{"rendered":"https:\/\/siliconcarbide.net\/?p=552"},"modified":"2022-12-20T22:36:50","modified_gmt":"2022-12-20T14:36:50","slug":"paagutatud-ranikarbiidi-tehnoloogia","status":"publish","type":"post","link":"https:\/\/siliconcarbide.net\/et\/technology-of-sintered-silicon-carbide\/","title":{"rendered":"paagutatud r\u00e4nikarbiidi tehnoloogia"},"content":{"rendered":"<p>R\u00e4nikarbiidkeraamikat kasutatakse \u00fcha laialdasemalt t\u00e4nu selle suurep\u00e4rasele tugevusele k\u00f5rgel temperatuuril, kulumiskindlusele, korrosioonikindlusele ja termilise \u0161oki vastupidavusele. SiC-keraamikal on materjalide valdkonnas \u00fcha olulisem roll. Seet\u00f5ttu on h\u00e4davajalik viia l\u00e4bi t\u00e4iendavaid uuringuid SiC-materjalide valdkonnas, et v\u00e4hendada tootmiskulusid, lihtsustada tootmisprotsesse ja edendada SiC-keraamikatoodete arendamist, parandades samal ajal pidevalt nende suurep\u00e4raseid omadusi.<\/p>\n<p>Paagutatud r\u00e4nikarbiidi peetakse SiC paagutamiseks k\u00f5ige paljulubavamaks meetodiks. Atmosf\u00e4\u00e4rilise paagutamise protsessi abil on v\u00f5imalik valmistada suurem\u00f5\u00f5tmelist ja keerulise kujuga r\u00e4nikarbiidkeraamikat. Ameerika \u00dchendriikide ettev\u00f5te GE Corporation on v\u00f5tnud kasutusele j\u00e4rgmised meetmed: \u03b2 \u2013 boori ja s\u00fcsiniku lisamine SiC-sse, paagutamine \u00fcle 2000 \u2103 inertses keskkonnas ning tihedusega \u00fcle 98% paagutatud r\u00e4nikarbiidi saamine temperatuuril 2020 \u2103. Kasutades paagutusabiainetena Y\u2082O\u2083 ja Al\u2082O\u2083 ning madala sulamistemperatuuriga YAG-i (Y\u2083Al\u2085O\u2081\u2082) p\u00f5hikomponendina, Hiina Teaduste Akadeemia Shanghai Silikaatinstituut p\u00f5letas r\u00e4nikarbiidkeraamikat, mille paindetugevus ja murdumiskindlus olid vastavalt 707 ja 10,7 temperatuuril 1850 \u2103. Shandongi Silikaadi Uurimis- ja Disainiinstituudi teadlane Liu Baoying lisas paagutuslisanditena sobiva koguse Al\u2082O\u2083 ja Y\u2082O\u2083 ning valmistas 1780 \u2103 juures suhtelise tihedusega 97% peeneid SiC-komposiitkeraamilisi materjale , kasutades injektsioonvormimise protsessi, mis vastab mehaaniliste tihendite ja kulumiskindlate keraamikatoodete t\u00f6\u00f6stusliku tootmise n\u00f5uetele. Siiani ei ole paagutatud r\u00e4nikarbiidi alased uuringud aga olnud eriti p\u00f5hjalikud, mist\u00f5ttu neid tuleb veelgi s\u00fcvendada.<\/p>\n<p><a href=\"http:\/\/siliconcarbide.net\/wp-content\/uploads\/2022\/12\/sintered-silicon-carbide.jpg\"><img decoding=\"async\" class=\"size-full wp-image-555 lazyload\" data-src=\"http:\/\/siliconcarbide.net\/wp-content\/uploads\/2022\/12\/sintered-silicon-carbide.jpg\" alt=\"paagutatud r\u00e4nikarbiid\" width=\"552\" height=\"461\" data-srcset=\"https:\/\/siliconcarbide.net\/wp-content\/uploads\/2022\/12\/sintered-silicon-carbide.jpg 552w, https:\/\/siliconcarbide.net\/wp-content\/uploads\/2022\/12\/sintered-silicon-carbide-300x251.jpg 300w\" data-sizes=\"(max-width: 552px) 100vw, 552px\" src=\"data:image\/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==\" style=\"--smush-placeholder-width: 552px; --smush-placeholder-aspect-ratio: 552\/461;\" \/><\/a><\/p>","protected":false},"excerpt":{"rendered":"<p>silicon carbide ceramic are more and more widely used because of their excellent high temperature strength, wear resistance, corrosion resistance and thermal shock resistance. SiC ceramics play an increasingly important role in the field of materials. Therefore, it is urgent to carry out further research on SiC materials in order to reduce production costs, simplify&hellip;&nbsp;<\/p>","protected":false},"author":1,"featured_media":555,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"neve_meta_sidebar":"","neve_meta_container":"","neve_meta_enable_content_width":"","neve_meta_content_width":0,"neve_meta_title_alignment":"","neve_meta_author_avatar":"","neve_post_elements_order":"","neve_meta_disable_header":"","neve_meta_disable_footer":"","neve_meta_disable_title":"","ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-552","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/posts\/552","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/comments?post=552"}],"version-history":[{"count":3,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/posts\/552\/revisions"}],"predecessor-version":[{"id":556,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/posts\/552\/revisions\/556"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/media\/555"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/media?parent=552"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/categories?post=552"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/et\/wp-json\/wp\/v2\/tags?post=552"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}