{"id":735,"date":"2026-11-08T23:03:29","date_gmt":"2026-11-08T15:03:29","guid":{"rendered":"https:\/\/siliconcarbide.net\/?p=735"},"modified":"2026-11-08T23:03:29","modified_gmt":"2026-11-08T15:03:29","slug":"rekrystalizovany-karbid-kremiku-pro-pecirske-prislusenstvi","status":"publish","type":"post","link":"https:\/\/siliconcarbide.net\/cs\/recrystallized-silicon-carbide-for-kiln-furniture\/","title":{"rendered":"Rekrystalizovan\u00fd karbid k\u0159em\u00edku pro pecn\u00ed n\u00e1\u0159ad\u00ed"},"content":{"rendered":"

Rekrystalizovan\u00fd karbid k\u0159em\u00edku (RSiC \/ RSC) \u2013 pro pecn\u00ed n\u00e1\u0159ad\u00ed, trysky ho\u0159\u00e1k\u016f a vysokoteplotn\u00ed konstruk\u010dn\u00ed d\u00edly<\/span><\/h1>\n

Pokud teplota v peci p\u0159esahuje 1450 \u00b0C, doch\u00e1z\u00ed k rychl\u00e9mu oh\u0159evu a ochlazov\u00e1n\u00ed a slab\u00fdm \u010dl\u00e1nkem by se mohla st\u00e1t slinovac\u00ed p\u0159\u00edsada nebo f\u00e1ze s voln\u00fdm k\u0159em\u00edkem \u2013 v takov\u00e9m p\u0159\u00edpad\u011b si p\u0159ed zad\u00e1n\u00edm specifikace p\u0159e\u010dt\u011bte tuto str\u00e1nku v\u011bnovanou materi\u00e1l\u016fm.<\/span><\/strong> RSiC nen\u00ed \u201cdal\u0161\u00ed druh SiC\u201d. Je to ten druh, kter\u00fd si vyberete, kdy\u017e <\/span>odolnost proti tepeln\u00fdm \u0161ok\u016fm a chemick\u00e1 \u010distota jsou d\u016fle\u017eit\u011bj\u0161\u00ed ne\u017e maxim\u00e1ln\u00ed hustota<\/span><\/strong>.<\/span><\/p>\n

Jedin\u00fd rozd\u00edl, kter\u00fd ovliv\u0148uje v\u0161echna n\u00e1sledn\u00e1 rozhodnut\u00ed<\/span><\/h2>\n

V\u011bt\u0161ina str\u00e1nek dodavatel\u016f uv\u00e1d\u00ed hustotu, p\u00f3rovitost a pevnost RSiC a t\u00edm to kon\u010d\u00ed. Tyto informace jsou sice nezbytn\u00e9, ale nesta\u010d\u00ed. Ot\u00e1zka rozhoduj\u00edc\u00ed pro rozhodnut\u00ed zn\u00ed: <\/span>Pro\u010d by si n\u011bkdo z\u00e1m\u011brn\u011b vybral karbid k\u0159em\u00edku s otev\u0159enou p\u00f3rovitost\u00ed 10\u201320% nam\u00edsto hust\u00e9ho SSiC, kter\u00fd v technick\u00e9m listu vypad\u00e1 l\u00e9pe?<\/span><\/strong><\/p>\n

Odpov\u011b\u010f spo\u010d\u00edv\u00e1 v mikrostruktu\u0159e. RSiC se vyr\u00e1b\u00ed slinov\u00e1n\u00edm vysoce \u010dist\u00e9ho pr\u00e1\u0161ku SiC p\u0159i teplot\u011b p\u0159ibli\u017en\u011b 2200\u20132450 \u00b0C <\/span>bez slinovac\u00edch p\u0159\u00edsad<\/span><\/strong>. Zrna karbidu k\u0159em\u00edku rostou prost\u0159ednictv\u00edm mechanismu odpa\u0159ov\u00e1n\u00ed a kondenzace, p\u0159i\u010dem\u017e mezi zrny vznikaj\u00ed p\u0159\u00edm\u00e9 vazby v podob\u011b kr\u010dk\u016f. Materi\u00e1l se b\u011bhem vypalov\u00e1n\u00ed smr\u0161\u0165uje jen velmi m\u00e1lo a prostor, kter\u00fd by hust\u00fd SiC zaplnil slinovac\u00edmi p\u0159\u00edsadami nebo voln\u00fdm k\u0159em\u00edkem, z\u016fst\u00e1v\u00e1 jako <\/span>propojen\u00e1, otev\u0159en\u00e1 p\u00f3rovitost<\/span><\/strong>. Tato por\u00e9znost nen\u00ed v\u00fdrobn\u00ed vadou. Jedn\u00e1 se o funk\u010dn\u00ed vlastnost, d\u00edky n\u00ed\u017e m\u00e1 RSiC odolnost proti tepeln\u00fdm \u0161ok\u016fm a chemickou inertnost.<\/span><\/p>\n

Toto je rozhoduj\u00edc\u00ed krit\u00e9rium, kter\u00e9 odli\u0161uje kupuj\u00edc\u00edho, kter\u00fd rozum\u00ed jednotliv\u00fdm t\u0159\u00edd\u00e1m SiC, od toho, kdo porovn\u00e1v\u00e1 pouze sloupec s hustotou.<\/span><\/p>\n

RSiC vs. SSiC vs. SiSiC\/RBSiC: srovn\u00e1vac\u00ed tabulka, kterou v\u011bt\u0161ina dodavatel\u016f na sv\u00fdch str\u00e1nk\u00e1ch s produkty neuv\u00e1d\u00ed<\/span><\/h2>\n
\n
\n
\n
 <\/div>\n<\/div>\n
 <\/div>\n<\/div>\n\n\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/span><\/th>\nRSiC (rekrystalizovan\u00fd)<\/span><\/strong><\/th>\nSSiC (sintrovan\u00fd bez tlaku)<\/span><\/strong><\/th>\nSiSiC \/ RBSiC (reak\u010dn\u011b v\u00e1zan\u00e9)<\/span><\/strong><\/th>\n<\/tr>\n<\/thead>\n
\u010cistota SiC<\/span><\/strong><\/td>\n\u226599%, <\/span>bez slinovac\u00edho \u010dinidla<\/span><\/strong><\/td>\nObvykle >98%, obsahuje slinovac\u00ed p\u0159\u00edsady na b\u00e1zi boru a uhl\u00edku<\/span><\/td>\nSiC kostra + <\/span>8\u201315% bez k\u0159em\u00edku<\/span><\/strong><\/td>\n<\/tr>\n
Otev\u0159en\u00e1 p\u00f3rovitost<\/span><\/strong><\/td>\n10\u201320% (funk\u010dn\u00ed, p\u0159ipojen\u00e9)<\/span><\/strong><\/td>\nObvykle <2\u20133%<\/span><\/td>\nT\u00e9m\u011b\u0159 nula (p\u00f3ry vypln\u011bn\u00e9 Si)<\/span><\/td>\n<\/tr>\n
Maxim\u00e1ln\u00ed provozn\u00ed teplota (vzduch)<\/span><\/strong><\/td>\n~1600\u20131650 \u00b0C<\/span><\/strong><\/td>\n~1500\u20131550 \u00b0C (v z\u00e1vislosti na pomocn\u00e9m materi\u00e1lu)<\/span><\/td>\nOmezeno na ~1400 \u00b0C p\u0159i dlouhodob\u00e9m provozu<\/span><\/strong> (voln\u00fd Si se zm\u011bk\u010duje)<\/span><\/td>\n<\/tr>\n
Odolnost proti teplotn\u00edm \u0161ok\u016fm<\/span><\/strong><\/td>\nVynikaj\u00edc\u00ed<\/span><\/strong> \u2014 hlavn\u00ed d\u016fvod, pro\u010d se vol\u00ed RSiC<\/span><\/td>\nDobr\u00e9, ale omezen\u00e9 hust\u0161\u00edm t\u011blem a pom\u016fckami<\/span><\/td>\nSt\u0159edn\u00ed; voln\u00fd k\u0159em\u00edk vede ke vzniku f\u00e1ze s n\u00edzkou teplotou t\u00e1n\u00ed<\/span><\/td>\n<\/tr>\n
Chemick\u00e1 odolnost<\/span><\/strong><\/td>\nVynikaj\u00edc\u00ed \u2013 \u017e\u00e1dn\u00fd voln\u00fd Si, \u017e\u00e1dn\u00e1 sklovit\u00e1 f\u00e1ze na hranic\u00edch zrn<\/span><\/td>\nTo je dob\u0159e, ale slinovac\u00ed p\u0159\u00edsady se mohou v agresivn\u00edm chemick\u00e9m prost\u0159ed\u00ed vyluhovat<\/span><\/td>\nVoln\u00fd k\u0159em\u00edk omezuje odolnost v\u016f\u010di siln\u00fdm z\u00e1sad\u00e1m a kyselin\u011b fluorovod\u00edkov\u00e9<\/span><\/strong><\/td>\n<\/tr>\n
Typick\u00e1 geometrie \/ logika n\u00e1klad\u016f<\/span><\/strong><\/td>\nDesky, nosn\u00edky, trubky, trysky \u2014 <\/span>tenkost\u011bnn\u00e9 d\u00edly a d\u00edly podroben\u00e9 teplotn\u00edm cykl\u016fm<\/span><\/strong><\/td>\nHust\u00e9 opot\u0159ebiteln\u00e9 d\u00edly, t\u011bsn\u011bn\u00ed, mal\u00e9 p\u0159esn\u00e9 sou\u010d\u00e1stky<\/span><\/td>\nVelk\u00e9, slo\u017eit\u00e9 d\u00edly s tvarem bl\u00edzk\u00fdm kone\u010dn\u00e9mu tvaru<\/span><\/strong> kde je d\u016fle\u017eit\u011bj\u0161\u00ed cena ne\u017e maxim\u00e1ln\u00ed teplota<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

Pravidlo v\u00fdb\u011bru:<\/span><\/strong> p\u0159izp\u016fsobit zn\u00e1mku <\/span>teplota, atmosf\u00e9rick\u00e9 podm\u00ednky, kontakt s chemick\u00fdmi l\u00e1tkami a teplotn\u00ed cyklus \u2013 nikoli zkratka \u201cSiC\u201d.\u201d<\/span><\/strong> Pokud dan\u00e1 aplikace vy\u017eaduje hust\u00fd povrch s n\u00edzkou p\u00f3rovitost\u00ed z d\u016fvodu t\u011bsn\u011bn\u00ed nebo odolnosti proti opot\u0159eben\u00ed, nen\u00ed RSiC vhodnou volbou. Pokud aplikace zahrnuje opakovan\u00e9 rychl\u00e9 zah\u0159\u00edv\u00e1n\u00ed a ochlazov\u00e1n\u00ed na teploty nad 1450 \u00b0C a voln\u00fd k\u0159em\u00edk nebo f\u00e1ze usnad\u0148uj\u00edc\u00ed slinov\u00e1n\u00ed by se mohly st\u00e1t p\u0159\u00ed\u010dinou poruchy, je RSiC \u010dasto jedin\u00fdm typem SiC, kter\u00fd tyto podm\u00ednky vydr\u017e\u00ed.<\/span>.<\/span><\/p>\n

Technick\u00e9 specifikace \u2013 \u00fadaje, kter\u00e9 jsou d\u016fle\u017eit\u00e9 pro specifikaci a vstupn\u00ed kontrolu<\/span><\/h2>\n

N\u00ed\u017ee uveden\u00e1 tabulka uv\u00e1d\u00ed rozsah vlastnost\u00ed, kter\u00fd byste m\u011bli pou\u017e\u00edt jako <\/span>m\u011b\u0159\u00edtko p\u0159i posuzov\u00e1n\u00ed technick\u00fdch list\u016f jak\u00e9hokoli dodavatele RSiC<\/span><\/strong>. Hodnoty se li\u0161\u00ed v z\u00e1vislosti na velikosti zrna, zp\u016fsobu tv\u00e1\u0159en\u00ed a profilu v\u00fdpalu; u dodavatele, kter\u00fd uv\u00e1d\u00ed pouze jednu hodnotu bez ud\u00e1n\u00ed rozmez\u00ed, je t\u0159eba si vy\u017e\u00e1dat informaci o zku\u0161ebn\u00ed norm\u011b a geometrii vzorku.<\/span><\/p>\n

\n
\n
 <\/div>\n
 <\/div>\n<\/div>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametr<\/span><\/th>\nTypick\u00fd rozsah RSiC<\/span><\/th>\nTechnick\u00e1 pozn\u00e1mka<\/span><\/th>\n<\/tr>\n<\/thead>\n
Obsah SiC<\/span><\/strong><\/td>\n\u226599 % hmot. %<\/span><\/td>\nBez slinovac\u00edho \u010dinidla<\/span><\/strong> je to, co odli\u0161uje tvrzen\u00ed o \u010distot\u011b; po\u017e\u00e1dejte o ov\u011b\u0159en\u00ed metodou ICP nebo XRF.<\/span><\/td>\n<\/tr>\n
Objemov\u00e1 hmotnost<\/span><\/strong><\/td>\n2,0\u20132,75 g\/cm\u00b3<\/span><\/td>\nNi\u017e\u0161\u00ed hodnota znamen\u00e1 vy\u0161\u0161\u00ed p\u00f3rovitost; hustota sama o sob\u011b nen\u00ed m\u011b\u0159\u00edtkem kvality.<\/span><\/td>\n<\/tr>\n
Otev\u0159en\u00e1 p\u00f3rovitost<\/span><\/strong><\/td>\n10\u201320% (funk\u010dn\u00ed t\u0159\u00eddy)<\/span><\/strong><\/td>\nNa str\u00e1nk\u00e1ch <\/span>p\u0159ipojen\u00fd<\/span><\/strong> Pro propustnost a tepeln\u00fd \u0161ok je d\u016fle\u017eit\u00e1 povaha p\u00f3rovitosti, nikoli pouze jej\u00ed procentu\u00e1ln\u00ed pod\u00edl.<\/span><\/td>\n<\/tr>\n
Pevnost v ohybu (RT)<\/span><\/strong><\/td>\n~80\u2013110 MPa<\/span><\/td>\nRSiC je <\/span>ne<\/span><\/strong> SiC s nejvy\u0161\u0161\u00ed pevnost\u00ed; nepou\u017e\u00edvejte jej pro nosn\u00e9 konstruk\u010dn\u00ed prvky, u nich\u017e by byl SSiC pevn\u011bj\u0161\u00ed.<\/span><\/td>\n<\/tr>\n
Pevnost v ohybu (1200 \u00b0C)<\/span><\/strong><\/td>\n~90\u2013110 MPa<\/span><\/td>\nZachov\u00e1n\u00ed pevnosti p\u0159i vysok\u00e9 teplot\u011b p\u0159edstavuje kl\u00ed\u010dovou v\u00fdhodu oproti odr\u016fd\u00e1m obsahuj\u00edc\u00edm voln\u00fd k\u0159em\u00edk.<\/span><\/td>\n<\/tr>\n
Maxim\u00e1ln\u00ed provozn\u00ed teplota (vzduch)<\/span><\/strong><\/td>\n~1600\u20131650 \u00b0C<\/span><\/strong><\/td>\nKrom\u011b toho se zrychluje kinetika oxidace; teplota v inertn\u00ed atmosf\u00e9\u0159e m\u016f\u017ee dos\u00e1hnout ~1800 \u00b0C.<\/span><\/td>\n<\/tr>\n
Maxim\u00e1ln\u00ed provozn\u00ed teplota (v inertn\u00edm prost\u0159ed\u00ed)<\/span><\/strong><\/td>\n~1800 \u00b0C<\/span><\/td>\nP\u0159i porovn\u00e1v\u00e1n\u00ed tvrzen\u00ed dodavatel\u016f v\u00fdslovn\u011b uve\u010fte atmosf\u00e9ru.<\/span><\/td>\n<\/tr>\n
Tepeln\u00e1 vodivost (RT)<\/span><\/strong><\/td>\n~23 W\/m\u00b7K<\/span><\/td>\nSt\u0159edn\u00ed, nepat\u0159\u00ed k nejvy\u0161\u0161\u00edm hodnot\u00e1m mezi t\u0159\u00eddami SiC, ale je dosta\u010duj\u00edc\u00ed pro pecn\u00ed n\u00e1\u0159ad\u00ed a z\u00e1\u0159iv\u00e9 trubice.<\/span><\/td>\n<\/tr>\n
CTE (20\u20131000 \u00b0C)<\/span><\/strong><\/td>\n~4,6\u20134,8 \u00d7 10\u207b\u2076 \/K<\/span><\/td>\nN\u00edzk\u00e1 rozta\u017enost je z\u00e1kladn\u00edm materi\u00e1ln\u00edm p\u0159edpokladem pro odolnost proti tepeln\u00e9mu \u0161oku.<\/span><\/td>\n<\/tr>\n
Parametr tepeln\u00e9ho \u0161oku R1<\/span><\/strong><\/td>\n~56 K<\/span><\/td>\nSrovn\u00e1vac\u00ed ukazatel; pou\u017eijte jej k porovn\u00e1n\u00ed jakost\u00ed RSiC od r\u016fzn\u00fdch dodavatel\u016f, nikoli jako absolutn\u00ed krit\u00e9rium pro schv\u00e1len\u00ed \u010di zam\u00edtnut\u00ed.<\/span><\/td>\n<\/tr>\n
Zrnitos\u0165<\/span><\/strong><\/td>\n1\u2013150 \u03bcm (pod\u00e9ln\u011b)<\/span><\/td>\nHrub\u00e1 zrna jsou u RSiC b\u011b\u017en\u00e1 a p\u0159isp\u00edvaj\u00ed k vytvo\u0159en\u00ed m\u016fstkov\u00e9 struktury; velmi jemn\u00e1 zrna mohou nazna\u010dovat jinou jakostn\u00ed t\u0159\u00eddu.<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

Zdroje dat byly z\u00edsk\u00e1ny z technick\u00fdch list\u016f dodavatel\u016f; uveden\u00e9 rozsahy odr\u00e1\u017eej\u00ed b\u011b\u017en\u00e9 obchodn\u00ed odchylky a nep\u0159edstavuj\u00ed z\u00e1ruku pro v\u0161echny geometrick\u00e9 varianty<\/span><\/strong>.<\/span><\/p>\n

Kdy je RSiC spr\u00e1vn\u00e1 specifikace \u2013 a kdy je nespr\u00e1vn\u00e1<\/span><\/h2>\n

Zadejte RSiC, pokud je p\u0159\u00ed\u010dinou poruchy teplotn\u00ed \u0161ok nebo chemick\u00e9 p\u016fsoben\u00ed p\u0159i teplot\u011b<\/span><\/h3>\n

Pecn\u00ed n\u00e1\u0159ad\u00ed pro cykly rychl\u00e9ho vypalov\u00e1n\u00ed.<\/span><\/strong> Tenk\u00e9 podlo\u017eky, nosn\u00edky a v\u00e1lce, kter\u00e9 jsou opakovan\u011b vystavov\u00e1ny rychl\u00e9mu zah\u0159\u00edv\u00e1n\u00ed a ochlazov\u00e1n\u00ed p\u0159i teplot\u00e1ch nad 1450 \u00b0C. N\u00edzk\u00e1 smr\u0161tivost b\u011bhem slinov\u00e1n\u00ed RSiC umo\u017e\u0148uje <\/span>tenkost\u011bnn\u00e9 profily bez deformace<\/span><\/strong>, a otev\u0159en\u00e1 p\u00f3rovitost umo\u017e\u0148uje vyrovn\u00e1n\u00ed tepeln\u00e9ho nam\u00e1h\u00e1n\u00ed, kter\u00e9 by u hust\u0161\u00edho t\u011blesa vedlo k prasknut\u00ed<\/span>.<\/span><\/p>\n

Trysky ho\u0159\u00e1k\u016f a s\u00e1lav\u00e9 trubice.<\/span><\/strong> Trysky ho\u0159\u00e1k\u016f z RSiC se pou\u017e\u00edvaj\u00ed v p\u00e1sov\u00fdch, tunelov\u00fdch a v\u00e1lcov\u00fdch pec\u00edch, proto\u017ee odol\u00e1vaj\u00ed oxidaci a teplotn\u00edm cykl\u016fm a\u017e do teplot ~1650\u20131700 \u00b0C, ani\u017e by doch\u00e1zelo k prask\u00e1n\u00ed, jak\u00e9 se vyskytuje u reak\u010dn\u011b v\u00e1zan\u00e9ho SiC, kdy\u017e se voln\u00fd k\u0159em\u00edk st\u00e1v\u00e1 slabou f\u00e1z\u00ed.<\/span>.<\/span><\/p>\n

Sou\u010d\u00e1sti pec\u00ed pro v\u00fdrobu polovodi\u010d\u016f a fotovoltaick\u00fdch \u010dl\u00e1nk\u016f.<\/span><\/strong> RSiC vysok\u00e9 \u010distoty se pou\u017e\u00edv\u00e1 pro <\/span>LPCVD lopatky, vani\u010dky a vnit\u0159n\u00ed sou\u010d\u00e1sti dif\u00fazn\u00edch pec\u00ed<\/span><\/strong> kde je nutn\u00e9 omezit kontaminaci kovov\u00fdmi \u010d\u00e1sticemi a tvorbu \u010d\u00e1stic. Rozhoduj\u00edc\u00edm faktorem pro specifikaci je zde absence slinovac\u00edch p\u0159\u00edsad, nikoli hustota<\/span>.<\/span><\/p>\n

Ochrann\u00e9 trubky pro sou\u010d\u00e1sti v atmosf\u00e9rick\u00fdch pec\u00edch.<\/span><\/strong> Propojen\u00e1 p\u00f3rovitost materi\u00e1lu RSiC neovliv\u0148uje jeho chemickou inertnost ve v\u011bt\u0161in\u011b atmosf\u00e9r pec\u00ed a materi\u00e1l sn\u00e1\u0161\u00ed teplotn\u00ed gradienty nap\u0159\u00ed\u010d st\u011bnou trubky bez odlupov\u00e1n\u00ed.<\/span><\/p>\n

Nezad\u00e1vejte RSiC, pokud je po\u017eadavkem hustota, t\u011bsnost nebo maxim\u00e1ln\u00ed pevnost<\/span><\/h3>\n

Pokud mus\u00ed dan\u00fd d\u00edl zajistit vakuov\u00e9 ut\u011bsn\u011bn\u00ed, m\u00edt le\u0161t\u011bn\u00fd op\u011brn\u00fd povrch nebo n\u00e9st konstruk\u010dn\u00ed zat\u00ed\u017een\u00ed, kde <\/span>Vy\u0161\u0161\u00ed hustota a pevnost materi\u00e1lu SSiC<\/span><\/strong> jsou rozhoduj\u00edc\u00ed vlastnosti, pak RSiC nen\u00ed vhodn\u00e1 t\u0159\u00edda. Podobn\u011b, pokud je d\u00edl velk\u00fd, geometricky slo\u017eit\u00fd a p\u0159i teplot\u00e1ch pod ~1400 \u00b0C je d\u016fle\u017eit\u00e1 cena, <\/span>SiSiC\/RBSiC<\/span><\/strong> je obvykle vhodn\u011bj\u0161\u00ed volbou \u2013 voln\u00fd k\u0159em\u00edk v n\u011bm vypl\u0148uje p\u00f3ry a umo\u017e\u0148uje v\u00fdrobu s tvarem bl\u00edzk\u00fdm kone\u010dn\u00e9mu, av\u0161ak za cenu omezen\u00ed z hlediska vysok\u00fdch teplot a chemick\u00e9 odolnosti<\/span>.<\/span><\/p>\n

Odpov\u011bdi na ot\u00e1zky, kter\u00e9 si kupuj\u00edc\u00ed skute\u010dn\u011b kladou p\u0159ed odesl\u00e1n\u00edm popt\u00e1vky<\/span><\/h2>\n

Je RSiC tot\u00e9\u017e jako SSiC?<\/span><\/strong> Ne. SSiC se slinuje bez tlaku za pou\u017eit\u00ed slinovac\u00edch p\u0159\u00edsad a je hust\u00fd. RSiC se rekrystalizuje bez p\u0159\u00edsad a zachov\u00e1v\u00e1 si <\/span>kontruk\u010dn\u011b dan\u00e1 otev\u0159en\u00e1 p\u00f3rovitost<\/span><\/strong>. Jedn\u00e1 se o r\u016fzn\u00e9 materi\u00e1ly s odli\u0161n\u00fdmi kompromisy mezi vlastnostmi, nikoli o synonyma<\/span>.<\/span><\/p>\n

Lze RSiC pou\u017e\u00edvat p\u0159i teplot\u00e1ch nad 1650 \u00b0C na vzduchu?<\/span><\/strong> Praktick\u00e1 mez nep\u0159etr\u017eit\u00e9ho provozu ve vzduchu \u010din\u00ed p\u0159ibli\u017en\u011b <\/span>1600\u20131650 \u00b0C<\/span><\/strong>. N\u011bkte\u0159\u00ed dodavatel\u00e9 uv\u00e1d\u011bj\u00ed vy\u0161\u0161\u00ed hodnoty pro kr\u00e1tkodob\u00e9 pou\u017eit\u00ed nebo provoz v inertn\u00ed atmosf\u00e9\u0159e; po\u017e\u00e1dejte o <\/span>atmosf\u00e9ra a trv\u00e1n\u00ed<\/span><\/strong> za jak\u00fdmkoli vy\u0161\u0161\u00edm n\u00e1rokem.<\/span><\/p>\n

Znamen\u00e1 por\u00e9znost, \u017ee je dan\u00fd d\u00edl m\u00e9n\u011b pevn\u00fd nebo m\u00e9n\u011b kvalitn\u00ed?<\/span><\/strong> To znamen\u00e1, \u017ee materi\u00e1l je <\/span>optimalizov\u00e1no s ohledem na teplotn\u00ed \u0161ok a \u010distotu, nikoli na maxim\u00e1ln\u00ed pevnost<\/span><\/strong>. Pokud va\u0161e pou\u017eit\u00ed tyto vlastnosti nevy\u017eaduje, m\u016f\u017ee se v\u00e1m v\u00edce hodit materi\u00e1l s vy\u0161\u0161\u00ed hustotou. P\u00f3rovitost je specifikace, nikoli ozna\u010den\u00ed vady.<\/span><\/p>\n

Jak\u00fd je rozd\u00edl mezi RSiC a SiSiC\/RBSiC p\u0159i pou\u017eit\u00ed v chemick\u00e9m prost\u0159ed\u00ed?<\/span><\/strong> SiSiC\/RBSiC obsahuje <\/span>voln\u00fd k\u0159em\u00edk<\/span><\/strong>, co\u017e omezuje jeho dlouhodob\u00e9 pou\u017eit\u00ed p\u0159i teplot\u00e1ch nad ~1400 \u00b0C a sni\u017euje odolnost v\u016f\u010di siln\u00fdm z\u00e1sad\u00e1m a prost\u0159ed\u00edm obsahuj\u00edc\u00edm kyselinu fluorovod\u00edkovou. RSiC neobsahuje voln\u00fd k\u0159em\u00edk ani sklovitou f\u00e1zi na hranic\u00edch zrn, a proto se up\u0159ednost\u0148uje, kdy\u017e <\/span>chemick\u00e1 inertnost p\u0159i dan\u00e9 teplot\u011b<\/span><\/strong> je to podm\u00ednka<\/span>.<\/span><\/p>\n

Je mo\u017en\u00e9 dod\u00e1vat d\u00edly z RSiC v nestandardn\u00edch tvarech, tedy nejen ve form\u011b standardn\u00edch desek a trubek?<\/span><\/strong> Ano, v r\u00e1mci geometrick\u00fdch omezen\u00ed procesu rekrystalizace. RSiC se dob\u0159e hod\u00ed pro <\/span>tenkost\u011bnn\u00e9 tvary s velkou z\u00e1kladovou plochou<\/span><\/strong> jako jsou nap\u0159\u00edklad desky a nosn\u00edky, av\u0161ak extr\u00e9mn\u011b siln\u00e9 profily nebo slo\u017eit\u00e9 vnit\u0159n\u00ed dutiny lze z ekonomick\u00e9ho hlediska v\u00fdhodn\u011bji vyrobit z materi\u00e1lu s reak\u010dn\u00edm spojem. Za\u0161lete n\u00e1m v\u00fdkres a provozn\u00ed podm\u00ednky, abychom mohli posoudit proveditelnost v\u00fdroby.<\/span><\/p>","protected":false},"excerpt":{"rendered":"

Recrystallized Silicon Carbide (RSiC \/ RSC) \u2014 for Kiln Furniture, Burner Nozzles & High-Temperature Structural Parts If your furnace cycle runs above 1450\u00b0C, involves rapid heating\/cooling, and a sintering aid or free-silicon phase would become the weak link \u2014 this is the material page you should read before you specify. RSiC is not \u201canother SiC… <\/p>","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"neve_meta_sidebar":"","neve_meta_container":"","neve_meta_enable_content_width":"off","neve_meta_content_width":70,"neve_meta_title_alignment":"","neve_meta_author_avatar":"","neve_post_elements_order":"","neve_meta_disable_header":"","neve_meta_disable_footer":"","neve_meta_disable_title":"","ngg_post_thumbnail":0,"footnotes":""},"categories":[23],"tags":[],"class_list":["post-735","post","type-post","status-publish","format-standard","hentry","category-recrystallized-silicon-carbide"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts\/735","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/comments?post=735"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts\/735\/revisions"}],"predecessor-version":[{"id":736,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts\/735\/revisions\/736"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/media?parent=735"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/categories?post=735"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/tags?post=735"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}