{"id":602,"date":"2024-05-12T21:52:47","date_gmt":"2024-05-12T13:52:47","guid":{"rendered":"https:\/\/siliconcarbide.net\/?p=602"},"modified":"2024-05-12T21:57:13","modified_gmt":"2024-05-12T13:57:13","slug":"definice-karbidu-kremiku","status":"publish","type":"post","link":"https:\/\/siliconcarbide.net\/cs\/silicon-carbide-definition\/","title":{"rendered":"Definice karbidu k\u0159em\u00edku"},"content":{"rendered":"<p>Karbid k\u0159em\u00edku (SiC) je tvrd\u00e1, synteticky vyr\u00e1b\u011bn\u00e1 krystalick\u00e1 slou\u010denina, kter\u00e1 se \u0161iroce pou\u017e\u00edv\u00e1 jako abrazivn\u00ed a ot\u011bruvzdorn\u00fd materi\u00e1l, v \u017e\u00e1ruvzdorn\u00fdch a keramick\u00fdch aplikac\u00edch a tak\u00e9 jako polovodi\u010dov\u00fd substr\u00e1t pro sv\u011bteln\u00e9 diody (LED).<\/p>\n<p>Polovodi\u010de EFM tak\u00e9 p\u0159ekon\u00e1vaj\u00ed tradi\u010dn\u00ed k\u0159em\u00edkov\u00e9 polovodi\u010de ve vysokonap\u011b\u0165ov\u00fdch prost\u0159ed\u00edch, jak\u00e1 se vyskytuj\u00ed v nap\u00e1jec\u00edch za\u0159\u00edzen\u00edch pro elektromobily (EV), a poskytuj\u00ed vynikaj\u00edc\u00ed v\u00fdkon d\u00edky minimalizaci ztr\u00e1t nap\u011bt\u00ed a proudu a tak\u00e9 d\u00edky zmen\u0161en\u00ed a odleh\u010den\u00ed z\u00e1kladn\u00edch komponent pro spr\u00e1vu bateri\u00ed p\u0159i sou\u010dasn\u00e9m sn\u00ed\u017een\u00ed velikosti a hmotnosti.<\/p>\n<h2>Karbid k\u0159em\u00edku<\/h2>\n<p>Karbid k\u0159em\u00edku je inertn\u00ed keramick\u00e1 slou\u010denina slo\u017een\u00e1 z k\u0159em\u00edku a uhl\u00edku. S tvrdost\u00ed 9 podle Mohsovy stupnice je na t\u0159et\u00edm m\u00edst\u011b za karbidem boru (9,5) a diamantem (10). Karbid k\u0159em\u00edku m\u00e1 vysokou mechanickou odolnost a z\u00e1rove\u0148 z\u016fst\u00e1v\u00e1 chemicky inertn\u00ed, tak\u017ee je ide\u00e1ln\u00ed pro aplikace ochrany tvrd\u00fdch povrch\u016f, jako jsou obr\u00e1b\u011bc\u00ed stroje.<\/p>\n<p>\u010cist\u00e9 uhl\u00edkov\u00e9 nanotrubi\u010dky obsahuj\u00ed \u010dty\u0159i atomy uhl\u00edku uspo\u0159\u00e1dan\u00e9 do \u010dty\u0159 uhl\u00edkov\u00fdch tetraedr\u016f, kovalentn\u011b spojen\u00fdch k\u0159em\u00edkov\u00fdmi vazbami. Toto uspo\u0159\u00e1d\u00e1n\u00ed umo\u017e\u0148uje polymorfismus s r\u016fzn\u00fdmi krystalov\u00fdmi strukturami a f\u00e1zemi.<\/p>\n<p>Krystalick\u00e1 struktura SiC m\u00e1 za n\u00e1sledek jeho vynikaj\u00edc\u00ed elektrick\u00e9 vlastnosti, v\u010detn\u011b vlastnost\u00ed polovodi\u010de se \u0161irok\u00fdm p\u00e1smov\u00fdm rozp\u011bt\u00edm (WBG), kter\u00e9 jsou nezbytn\u00e9 pro elektronick\u00e9 aplikace. V\u011bt\u0161\u00ed p\u00e1sov\u00e1 mezera umo\u017e\u0148uje elektron\u016fm rychleji opou\u0161t\u011bt ob\u011b\u017enou dr\u00e1hu, co\u017e vede k vy\u0161\u0161\u00edm frekvenc\u00edm a rychlej\u0161\u00edm operac\u00edm ne\u017e u b\u011b\u017en\u00fdch k\u0159em\u00edkov\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n<p>K\u0159em\u00edk jako z\u00e1kladn\u00ed materi\u00e1l m\u016f\u017ee b\u00fdt dopov\u00e1n dus\u00edkem, fosforem, heliem, borem a hlin\u00edkem, \u010d\u00edm\u017e vznikaj\u00ed polovodi\u010de typu n. Tranzistory bez k\u0159em\u00edku mohou nav\u00edc sn\u00ed\u017eit n\u00e1klady a spot\u0159ebu energie a\u017e o 40%.<\/p>\n<p>Karbid k\u0159em\u00edku (SiC) m\u016f\u017ee pracovat a\u017e do teploty 300 stup\u0148\u016f C, co\u017e z n\u011bj \u010din\u00ed vynikaj\u00edc\u00ed materi\u00e1l pro aplikace v prost\u0159ed\u00ed s vysok\u00fdmi teplotami, jako jsou motory elektrick\u00fdch vozidel. SiC m\u016f\u017ee eliminovat pot\u0159ebu aktivn\u00edch chladic\u00edch syst\u00e9m\u016f, kter\u00e9 zvy\u0161uj\u00ed hmotnost, n\u00e1klady a slo\u017eitost, co\u017e se projev\u00ed ve v\u011bt\u0161\u00edm dojezdu a krat\u0161\u00ed dob\u011b nab\u00edjen\u00ed t\u011bchto vozidel.<\/p>\n<h2>Polovodi\u010de<\/h2>\n<p>Karbid k\u0159em\u00edku je ji\u017e dlouho zn\u00e1m\u00fd pro sv\u00e9 jedine\u010dn\u00e9 elektrick\u00e9 vlastnosti, d\u00edky nim\u017e je velmi u\u017eite\u010dn\u00fd v elektronice. Polovodi\u010de, kter\u00e9 se st\u0159\u00eddav\u011b chovaj\u00ed jako vodi\u010de (jako m\u011bd\u011bn\u00e9 elektrick\u00e9 vodi\u010de) a izol\u00e1tory (polymern\u00ed izolace pokr\u00fdvaj\u00edc\u00ed tyto vodi\u010de), tvo\u0159\u00ed polovodi\u010dov\u00e9 materi\u00e1ly pou\u017e\u00edvan\u00e9 ke konstrukci integrovan\u00fdch obvod\u016f, diskr\u00e9tn\u00edch elektronick\u00fdch sou\u010d\u00e1stek, jako jsou diody a tranzistory, kter\u00e9 za ur\u010dit\u00fdch podm\u00ednek vedou elektrick\u00fd proud; jejich vodivost lze dokonce m\u011bnit stimulac\u00ed pomoc\u00ed elektrick\u00e9ho proudu, elektromagnetick\u00e9ho pole nebo sv\u011bteln\u00e9 stimulace.<\/p>\n<p>Karbid k\u0159em\u00edku se od tradi\u010dn\u00edch polovodi\u010d\u016f li\u0161\u00ed extr\u00e9mn\u011b \u0161irok\u00fdm p\u00e1smem. To znamen\u00e1, \u017ee k p\u0159esunu elektron\u016f z valen\u010dn\u00edho do vodivostn\u00edho p\u00e1su je zapot\u0159eb\u00ed mnohem v\u00edce energie; karbid k\u0159em\u00edku se proto m\u016f\u017ee pochlubit velmi n\u00edzk\u00fdmi ztr\u00e1tami v\u00fdkonu - co\u017e je neoceniteln\u00e1 vlastnost p\u0159i pou\u017eit\u00ed ve vysokonap\u011b\u0165ov\u00fdch aplikac\u00edch, jako jsou trak\u010dn\u00ed m\u011bni\u010de pro elektrick\u00e1 vozidla.<\/p>\n<p>Karbid k\u0159em\u00edku se ji\u017e dlouho pou\u017e\u00edv\u00e1 k r\u016fzn\u00fdm \u00fa\u010del\u016fm v pr\u016fmyslu i na akademick\u00e9 p\u016fd\u011b, od tryskac\u00edch zrn a karborundov\u00fdch tiska\u0159sk\u00fdch n\u00e1stroj\u016f a\u017e po tepeln\u00e9, elektrotechnick\u00e9 a stroj\u00edrensk\u00e9 aplikace. V posledn\u00ed dob\u011b v\u0161ak popt\u00e1vka po n\u011bm prudce vzrostla d\u00edky jeho n\u00edzk\u00e9 tepeln\u00e9 rozta\u017enosti, vysok\u00e9mu pom\u011bru pevnosti a tvrdosti a schopnosti odol\u00e1vat nep\u0159\u00edzniv\u00fdm podm\u00ednk\u00e1m.<\/p>\n<h2>Keramick\u00e9<\/h2>\n<p>Spojen\u00edm k\u0159em\u00edku a uhl\u00edku vznik\u00e1 atraktivn\u00ed materi\u00e1l s vynikaj\u00edc\u00edmi mechanick\u00fdmi, chemick\u00fdmi a tepeln\u00fdmi vlastnostmi. Vyzna\u010duje se extr\u00e9mn\u00ed tvrdost\u00ed - a\u017e dvojn\u00e1sobnou oproti diamantu na Mohsov\u011b stupnici - a tak\u00e9 vynikaj\u00edc\u00ed odolnost\u00ed proti tepeln\u00fdm \u0161ok\u016fm ve srovn\u00e1n\u00ed s jin\u00fdmi \u017e\u00e1ruvzdorn\u00fdmi materi\u00e1ly.<\/p>\n<p>Keramika je anorganick\u00fd nekovov\u00fd materi\u00e1l, kter\u00fd je v nevyp\u00e1len\u00e9m stavu velmi pru\u017en\u00fd, ale b\u011bhem vypalov\u00e1n\u00ed v\u00fdrazn\u011b tvrdne. Keramika zahrnuje r\u016fzn\u00e9 kategorie, nap\u0159:<\/p>\n<p>Keramika se pou\u017e\u00edv\u00e1 p\u0159edev\u0161\u00edm jako \u017e\u00e1ruvzdorn\u00fd materi\u00e1l, anorganick\u00fd materi\u00e1l, kter\u00fd zaji\u0161\u0165uje odolnost proti tepeln\u00e9mu a chemick\u00e9mu opot\u0159eben\u00ed a korozi. Keramika se vyr\u00e1b\u00ed v nejr\u016fzn\u011bj\u0161\u00edch tvarech a barv\u00e1ch a pou\u017e\u00edv\u00e1 se v r\u016fzn\u00fdch pr\u016fmyslov\u00fdch odv\u011btv\u00edch. Mezi d\u016fle\u017eit\u00e1 pou\u017eit\u00ed biokeramiky pat\u0159\u00ed protipo\u017e\u00e1rn\u00ed ochrana, supravodi\u010de a vyvol\u00e1v\u00e1n\u00ed biologick\u00fdch reakc\u00ed bun\u011bk. Bioaktivn\u00ed keramika m\u016f\u017ee b\u00fdt bu\u010f sama o sob\u011b bioaktivn\u00ed, nebo m\u016f\u017ee b\u00fdt bioaktivn\u00ed d\u00edky povrchov\u00e9 \u00faprav\u011b nebo vypln\u011bn\u00ed keramick\u00fdch p\u00f3r\u016f farmaceuticky \u00fa\u010dinn\u00fdmi l\u00e1tkami. Karbid k\u0159em\u00edku se \u0161iroce pou\u017e\u00edv\u00e1 pro automobilov\u00e9 brzdov\u00e9 kotou\u010de, kter\u00e9 v\u00fdrazn\u011b sni\u017euj\u00ed t\u0159en\u00ed a emise a z\u00e1rove\u0148 odol\u00e1vaj\u00ed vysok\u00fdm teplot\u00e1m bez nutnosti aktivn\u00edch chladic\u00edch syst\u00e9m\u016f, kter\u00e9 zvy\u0161uj\u00ed hmotnost, slo\u017eitost a n\u00e1klady. Krom\u011b toho je jeho pou\u017eit\u00ed z\u00e1kladem mnoha brusiv a \u0159ezn\u00fdch n\u00e1stroj\u016f.<\/p>\n<h2>Automobilov\u00fd pr\u016fmysl<\/h2>\n<p>Karbid k\u0159em\u00edku (SiC) je extr\u00e9mn\u011b hou\u017eevnat\u00fd materi\u00e1l, kter\u00fd se na Mohsov\u011b stupnici \u0159ad\u00ed na dev\u00e1t\u00e9 m\u00edsto mezi oxid hlinit\u00fd (9) a diamant (10). Karbid k\u0159em\u00edku poprv\u00e9 um\u011ble syntetizoval americk\u00fd vyn\u00e1lezce Edward Acheson v roce 1891, kdy\u017e se pokou\u0161el vyrobit um\u011bl\u00e9 diamanty, ale m\u00edsto toho objevil ve sv\u00e9 elektricky zah\u0159\u00edvan\u00e9 tavenin\u011b uhl\u00edku a oxidu hlinit\u00e9ho mal\u00e9 \u010dern\u00e9 krystalky SiC, kter\u00e9 rozemlel do formy pr\u00e1\u0161ku pro pr\u016fmyslov\u00e9 brusivo. Chemik Henri Moissan, nositel Nobelovy ceny, tuto slou\u010deninu v roce 1905 pozoroval v p\u0159\u00edrod\u011b jako pr\u016fhledn\u00fd miner\u00e1l zvan\u00fd moissanit.<\/p>\n<p>Karbid k\u0159em\u00edku je d\u00edky sv\u00e9 jedine\u010dn\u00e9 atomov\u00e9 struktu\u0159e a polovodi\u010dov\u00fdm vlastnostem ide\u00e1ln\u00ed pro elektronick\u00e9 aplikace, jako jsou diody, tranzistory a v\u00fdkonov\u00e1 za\u0159\u00edzen\u00ed. M\u00e1 desetkr\u00e1t v\u011bt\u0161\u00ed nap\u011b\u0165ovou odolnost ne\u017e tradi\u010dn\u00ed k\u0159em\u00edk a funguje je\u0161t\u011b l\u00e9pe v syst\u00e9mech p\u0159esahuj\u00edc\u00edch 1000 V, co\u017e z n\u011bj \u010din\u00ed ide\u00e1ln\u00ed materi\u00e1l pro spln\u011bn\u00ed vysokonap\u011b\u0165ov\u00fdch po\u017eadavk\u016f spojen\u00fdch s nab\u00edjec\u00edmi stanicemi pro elektromobily a syst\u00e9my \u0159\u00edzen\u00ed spot\u0159eby energie.<\/p>\n<p>SiC m\u016f\u017ee v\u00fdrazn\u011b zlep\u0161it \u00fa\u010dinnost sp\u00edn\u00e1n\u00ed a z\u00e1rove\u0148 pomoci sn\u00ed\u017eit velikost a hmotnost z\u00e1kladn\u00edch komponent pro elektromobily, jako jsou DC-DC m\u011bni\u010de, palubn\u00ed nab\u00edje\u010dky a syst\u00e9my \u0159\u00edzen\u00ed bateri\u00ed. Tyto pokroky by mohly p\u0159ibl\u00ed\u017eit bezemisn\u00ed j\u00edzdu k masov\u00e9mu roz\u0161\u00ed\u0159en\u00ed. Anal\u00fdza spole\u010dnosti GlobalData identifikuje v\u00edce ne\u017e 10 spole\u010dnost\u00ed - od dodavatel\u016f technologi\u00ed a zaveden\u00fdch automobilov\u00fdch spole\u010dnost\u00ed a\u017e po za\u010d\u00ednaj\u00edc\u00ed podniky - vyu\u017e\u00edvaj\u00edc\u00edch karbid k\u0159em\u00edku pro inovativn\u00ed \u0159e\u0161en\u00ed.<\/p>\n<p><a href=\"http:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition.jpg\"><img decoding=\"async\" class=\"alignnone size-full wp-image-604 lazyload\" data-src=\"http:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition.jpg\" alt=\"Definice karbidu k\u0159em\u00edku\" width=\"1702\" height=\"1276\" data-srcset=\"https:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition.jpg 1702w, https:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition-300x225.jpg 300w, https:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition-1024x768.jpg 1024w, https:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition-768x576.jpg 768w, https:\/\/siliconcarbide.net\/wp-content\/uploads\/2024\/05\/Silicon-Carbide-Definition-1536x1152.jpg 1536w\" data-sizes=\"(max-width: 1702px) 100vw, 1702px\" src=\"data:image\/gif;base64,R0lGODlhAQABAAAAACH5BAEKAAEALAAAAAABAAEAAAICTAEAOw==\" style=\"--smush-placeholder-width: 1702px; --smush-placeholder-aspect-ratio: 1702\/1276;\" \/><\/a><\/p>","protected":false},"excerpt":{"rendered":"<p>Silicon carbide (SiC) is a hard, synthetically produced crystalline compound widely used as an abrasive and wear-resistant material, in refractories and ceramics applications, as well as being the semiconductor substrate for light emitting diodes (LED). EFM semiconductors also outshone traditional silicon semiconductors in high-voltage environments like those found in electric vehicle (EV) power devices, providing [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-602","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts\/602","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/comments?post=602"}],"version-history":[{"count":3,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts\/602\/revisions"}],"predecessor-version":[{"id":606,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/posts\/602\/revisions\/606"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/media?parent=602"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/categories?post=602"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/cs\/wp-json\/wp\/v2\/tags?post=602"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}