Bas\u0131ms\u0131z sinterl\u0259nmi\u015f silikon karbid \u0259n perspektivli sinterl\u0259nmi\u015f silikon karbid hesab olunur v\u0259 bas\u0131ms\u0131z sinterl\u0259\u015fdirm\u0259 prosesi il\u0259 m\u00fcr\u0259kk\u0259b formalar v\u0259 b\u00f6y\u00fck \u00f6l\u00e7\u00fcl\u00fc silikon karbid keramika haz\u0131rlamaq m\u00fcmk\u00fcnd\u00fcr. Sinterl\u0259\u015fdirm\u0259 mexanizmin\u0259 g\u00f6r\u0259 bu c\u00fcr sinterl\u0259nmi\u015f silikon karbid b\u0259rk fazal\u0131 sinterl\u0259\u015fdirm\u0259 v\u0259 maye fazal\u0131 sinterl\u0259\u015fdirm\u0259 kimi iki yer\u0259 b\u00f6l\u00fcn\u0259 bil\u0259r. SiO-nun iz miqdar\u0131n\u0131 ehtiva ed\u0259n \u03b2-SiC atmosfer t\u0259zyiqi alt\u0131nda B v\u0259 C \u0259lav\u0259 etm\u0259kl\u0259 sinterl\u0259n\u0259 bil\u0259r. Bu \u00fcsul silikon karbidin sinterl\u0259\u015fm\u0259 kinetikas\u0131nda \u0259h\u0259miyy\u0259tli d\u0259r\u0259c\u0259d\u0259 yax\u015f\u0131la\u015fma yarad\u0131r. Uy\u011fun miqdarda B il\u0259 dopinq edildikd\u0259, B sinterl\u0259\u015fm\u0259 zaman\u0131 SiC d\u0259n\u0259 s\u0259rh\u0259dl\u0259rind\u0259 toplan\u0131r v\u0259 qism\u0259n SiC il\u0259 b\u0259rk h\u0259ll yaradaraq SiC-nin d\u0259n\u0259 s\u0259rh\u0259d enerjisini azald\u0131r. M\u00fclayim miqdarda s\u0259rb\u0259st C-nin dopinqi b\u0259rk fazal\u0131 sinterl\u0259\u015fm\u0259 \u00fc\u00e7\u00fcn faydal\u0131d\u0131r, \u00e7\u00fcnki SiC s\u0259thi ad\u0259t\u0259n az miqdarda SiO \u0259m\u0259l\u0259 g\u0259tir\u0259r\u0259k oksidl\u0259\u015fir v\u0259 m\u00fclayim miqdarda C \u0259lav\u0259 edilm\u0259si SiC s\u0259thind\u0259ki SiO filmini reduksiya edib aradan qald\u0131rma\u011fa k\u00f6m\u0259k edir, bel\u0259likl\u0259 s\u0259th enerjisini art\u0131r\u0131r. Lakin maye fazal\u0131 sinterinq m\u0259nfi t\u0259sir g\u00f6st\u0259r\u0259c\u0259k, \u00e7\u00fcnki C oksid \u0259lav\u0259l\u0259ri il\u0259 reaksiya ver\u0259r\u0259k qaz \u0259m\u0259l\u0259 g\u0259tir\u0259c\u0259k, keramika sinter k\u00fctl\u0259sind\u0259 \u00e7oxlu bo\u015fluqlar yaranmas\u0131na s\u0259b\u0259b olacaq v\u0259 bu da s\u0131xla\u015fma prosesin\u0259 t\u0259sir ed\u0259c\u0259k. Xammal\u0131n safl\u0131\u011f\u0131, inc\u0259liyi v\u0259 faz t\u0259rkibi silisium karbidin sinterl\u0259\u015fm\u0259 prosesind\u0259 \u00e7ox vacibdir. S. Proehazka atmosfer t\u0259zyiqi alt\u0131nda 2020 \u00b0C-d\u0259 B v\u0259 C-ni m\u00fcvafiq miqdarda \u0259lav\u0259 etm\u0259kl\u0259 ultra-inci \u03b2-SiC tozlar\u0131na (21 %-d\u0259n az oksigen t\u0259rkibli) sinterl\u0259\u015fdirilmi\u015f silisium karbidin s\u0131xl\u0131\u011f\u0131n\u0131 981 TP3T-d\u0259n y\u00fcks\u0259k s\u0259viyy\u0259y\u0259 \u00e7atd\u0131r\u0131b. Lakin SiC-B-C sistemi b\u0259rk fazal\u0131 sinterl\u0259m\u0259 kateqoriyas\u0131na daxildir, bu da y\u00fcks\u0259k sinterl\u0259m\u0259 temperaturu t\u0259l\u0259b edir, q\u0131r\u0131lma m\u00f6hk\u0259mliyi a\u015fa\u011f\u0131d\u0131r, q\u0131r\u0131lma rejimi tipik olaraq kristal boyunca q\u0131r\u0131lma, iri d\u0259n\u0259l\u0259r v\u0259 pis vahidlikdir. Xaricd\u0259 SiC \u00fczr\u0259 t\u0259dqiqatlar \u0259sas\u0259n maye fazal\u0131 sinterl\u0259m\u0259 \u00fcz\u0259rind\u0259 c\u0259ml\u0259\u015fib, y\u0259ni m\u00fc\u0259yy\u0259n sayda sinterl\u0259m\u0259 \u0259lav\u0259l\u0259ri il\u0259 a\u015fa\u011f\u0131 temperaturda SiC s\u0131xla\u015fd\u0131r\u0131lmas\u0131n\u0131 \u0259ld\u0259 etm\u0259k. SiC-nin maye fazal\u0131 sinterl\u0259m\u0259si yaln\u0131z b\u0259rk fazal\u0131 sinterl\u0259m\u0259y\u0259 nisb\u0259t\u0259n sinterl\u0259m\u0259 temperaturunu azaltm\u0131r, h\u0259m d\u0259 mikroyap\u0131n\u0131 yax\u015f\u0131la\u015fd\u0131r\u0131r v\u0259 bel\u0259likl\u0259, sinterl\u0259nmi\u015f b\u0259rkidin x\u00fcsusiyy\u0259tl\u0259ri b\u0259rk fazal\u0131 sinterl\u0259nmi\u015f b\u0259rkid\u0259 nisb\u0259t\u0259n yax\u015f\u0131la\u015f\u0131r.
\nM. Omori v\u0259 dig\u0259rl\u0259ri nadir torpaq oksidl\u0259rini AlO v\u0259 ya boridl\u0259rl\u0259 qar\u0131\u015fd\u0131raraq SiC-ni s\u0131x \u015f\u0259kild\u0259 sinter etdil\u0259r. Suzuki is\u0259 SiC-ni t\u0259kc\u0259 AlO \u0259lav\u0259si il\u0259 t\u0259xmin\u0259n 2000 \u00b0C-d\u0259 sinter etdi. A. Mulla v\u0259 dig\u0259rl\u0259ri 0,5 \u03bcm \u03b2-SiC-i (h\u00fcceyr\u0259l\u0259rin s\u0259thind\u0259 az miqdarda SiO il\u0259) AlO v\u0259 YO \u0259lav\u0259l\u0259ri il\u0259 1850\u20131950 \u00b0C-d\u0259 sinterl\u0259y\u0259r\u0259k n\u0259z\u0259ri s\u0131xl\u0131\u011f\u0131n 95,1 %-d\u0259n \u00e7ox nisbi s\u0131xl\u0131\u011fa malik SiC keramika \u0259ld\u0259 etmi\u015f, d\u0259n\u0259l\u0259ri is\u0259 inc\u0259, orta \u00f6l\u00e7\u00fcs\u00fc 1,5 \u03bcm olmu\u015fdur.
\nSilikon karbid keramikan\u0131n mikroyap\u0131s\u0131nda iri d\u0259n\u0259cikl\u0259r v\u0259 yax\u015f\u0131 \u00e7atlama m\u00f6hk\u0259mliyin\u0259 malik \u00e7ubuqvari struktur a\u015fkar edilmi\u015fdir. \u00c7ubuqvari d\u0259n\u0259cikl\u0259r \u00e7atlama m\u00f6hk\u0259mliyini art\u0131r\u0131r, lakin silikon karbid keramikan\u0131n m\u00f6hk\u0259mliyini azald\u0131r. Daha y\u00fcks\u0259k m\u00f6hk\u0259mlik v\u0259 m\u00f6hk\u0259mlik \u0259ld\u0259 etm\u0259k, eyni zamanda sinterl\u0259m\u0259 temperaturunu azaltmaq m\u0259qs\u0259dil\u0259 bu sinterl\u0259nmi\u015f silikon karbidin x\u00fcsusiyy\u0259tl\u0259rini m\u00fcxt\u0259lif \u0259lav\u0259l\u0259rl\u0259 \u015f\u00fc\u015f\u0259 fazas\u0131n\u0131n t\u0259rkibini t\u0259nziml\u0259m\u0259kl\u0259 yax\u015f\u0131la\u015fd\u0131rmaq \u00fc\u00e7\u00fcn \u00e7oxsayl\u0131 c\u0259hdl\u0259r edilib. Sinterl\u0259\u015fm\u0259 prosesi zaman\u0131 d\u0259n\u0259 s\u0259rh\u0259dind\u0259 maye fazan\u0131n yaranmas\u0131 v\u0259 unikal interfeys strukturu interfeys strukturunun z\u0259ifl\u0259m\u0259sin\u0259 s\u0259b\u0259b olmu\u015f, material\u0131n q\u0131r\u0131lmas\u0131 is\u0259 tam kristal boyunca q\u0131r\u0131lma rejimin\u0259 ke\u00e7mi\u015fdir ki, bu da material\u0131n m\u00f6hk\u0259mlik v\u0259 dayan\u0131ql\u0131\u011f\u0131n\u0131n \u0259h\u0259miyy\u0259tli d\u0259r\u0259c\u0259d\u0259 artmas\u0131na g\u0259tirib \u00e7\u0131xarm\u0131\u015fd\u0131r. Lakin AlO \u0259lav\u0259sinin istifad\u0259sinin a\u015fa\u011f\u0131 \u0259ritm\u0259 n\u00f6qt\u0259si v\u0259 y\u00fcks\u0259k buxarlanma meyilli \u015f\u00fc\u015f\u0259vari fazan\u0131n yaranmas\u0131na s\u0259b\u0259b oldu\u011funu, bu fazan\u0131n y\u00fcks\u0259k temperaturlarda g\u00fccl\u00fc buxarlanaraq material\u0131n \u00e7\u0259ki itkisin\u0259 v\u0259 s\u0131xla\u015fmas\u0131na m\u0259nfi t\u0259sir g\u00f6st\u0259rdiyini n\u0259z\u0259r\u0259 alaraq, \u0259lav\u0259d\u0259ki AlO k\u00fctl\u0259 fraksiyas\u0131 m\u00fcvafiq \u015f\u0259kild\u0259 art\u0131r\u0131lmal\u0131d\u0131r.<\/p>","protected":false},"excerpt":{"rendered":"
Pressureless sintered silicon carbide is considered to be the most promising sintered silicon carbide, and complex shapes and large sizes of silicon carbide ceramics can be prepared by the pressureless sintering process. Depending on the sintering mechanism, this kind of sintered silicon carbide can be further divided into solid-phase sintering and liquid-phase sintering. \u03b2-SiC containing […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-578","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts\/578","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/comments?post=578"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts\/578\/revisions"}],"predecessor-version":[{"id":579,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts\/578\/revisions\/579"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/media?parent=578"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/categories?post=578"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/tags?post=578"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}