Karbondioksid (C) v\u0259 B4C elementl\u0259rini sinter k\u00f6m\u0259k\u00e7il\u0259ri kimi ehtiva ed\u0259n silikon karbid keramikan\u0131n sinterl\u0259nm\u0259si b\u0259rk fazal\u0131 sinterl\u0259m\u0259dir v\u0259 sinterl\u0259m\u0259 prosesi \u0259sas\u0259n diffuziya mexanizmi il\u0259 idar\u0259 olunur, optimal sinterl\u0259m\u0259 temperaturu 2150 \u00b0C-dir. Sinterl\u0259m\u0259 prosesi sad\u0259dir v\u0259 idar\u0259 edilm\u0259si asand\u0131r. C + B4C sinter \u0259lav\u0259l\u0259rinin uy\u011fun miqdar\u0131 \u0259lav\u0259 edildikd\u0259, sinterl\u0259nmi\u015f silikon karbidin sinter prosesi sad\u0259 v\u0259 n\u0259zar\u0259t edilm\u0259si asand\u0131r; keramikan\u0131n sinterl\u0259nm\u0259si zaman\u0131 blokla m\u00fcqayis\u0259d\u0259 t\u0259xmin\u0259n 30% h\u0259cm daralmas\u0131 ba\u015f verir, bu da daha y\u00fcks\u0259k s\u0131xl\u0131ql\u0131, mexaniki x\u00fcsusiyy\u0259tl\u0259ri yax\u015f\u0131la\u015fd\u0131r\u0131lm\u0131\u015f silikon karbid x\u00fcsusi keramika \u0259ld\u0259 etm\u0259y\u0259 imkan verir. Haz\u0131rda \u0259n \u00e7ox istifad\u0259 olunan sinter \u0259lav\u0259l\u0259ri B4C + C, BN + C, BP (bor fosfidi) + C-dir, AI + C, AIN + C v\u0259 s. M\u00fcvafiq miqdarda C + B4C \u0259lav\u0259 etm\u0259kl\u0259 SiC-in t\u0259zyiqsiz sinterl\u0259\u015fdirilm\u0259si prosesi sad\u0259 v\u0259 n\u0259zar\u0259t edilm\u0259si asand\u0131r, material\u0131n s\u0131xl\u0131\u011f\u0131 daha y\u00fcks\u0259kdir, maksimum s\u0131xl\u0131q 3,169\/sm3 (nisbi s\u0131xl\u0131q 98,75%); mexaniki x\u00fcsusiyy\u0259tl\u0259ri yax\u015f\u0131d\u0131r, maksimum s\u0131x\u0131lma m\u00f6hk\u0259mliyi 550MPa-d\u0131r.
\n Silikon karbid xammal\u0131 \u00fcst\u00fcnl\u00fckle D50 d\u0259y\u0259ri 0,5\u20130,8 mikron olan t\u0259k mikropudrad\u0131r. Ad\u0259t\u0259n kimy\u0259vi c\u0259h\u0259td\u0259n emal olunmu\u015f ya\u015f\u0131l silikon karbid mikronlar\u0131 20 m3\/g spesifik s\u0259th sah\u0259sin\u0259 malikdir. H\u0259m\u00e7inin oksigen t\u0259rkibi m\u00fcmk\u00fcn q\u0259d\u0259r a\u015fa\u011f\u0131 olmal\u0131d\u0131r; \u0259lav\u0259 olunan B miqdar\u0131 t\u0259xmin\u0259n 0,5%\u20131,5% aras\u0131nda se\u00e7ilm\u0259lidir, C miqdar\u0131 is\u0259 SiC tozundak\u0131 oksigen s\u0259viyy\u0259sind\u0259n as\u0131l\u0131d\u0131r. Kimy\u0259vi t\u0259rkib: SiC > 99%, F-C < 0.1, Si + SiO2 < 0.1, Fe2O3 < 0.08. Z\u0259rr\u0259 \u015f\u0259klind\u0259 v\u0259 \u00f6l\u00e7\u00fcs\u00fcnd\u0259 t\u0259rkib: z\u0259rr\u0259l\u0259rin formas\u0131 \u0259n s\u0131x yerd\u0259\u015fm\u0259ni t\u0259min etm\u0259k \u00fc\u00e7\u00fcn dem\u0259k olar ki, sferikdir.
\n B4C v\u0259 C-nin \u0259lav\u0259 edilm\u0259si b\u0259rk fazal\u0131 sinterl\u0259\u015fdirm\u0259 kateqoriyas\u0131na daxildir v\u0259 daha y\u00fcks\u0259k sinterl\u0259\u015fdirm\u0259 temperaturlar\u0131 t\u0259l\u0259b edir. SiC sinterl\u0259\u015fdirm\u0259sinin h\u0259r\u0259k\u0259tverici q\u00fcvv\u0259si toz hiss\u0259cikl\u0259rinin s\u0259th enerjisi (Eb) il\u0259 \u00e7oxkristall\u0131 sinterl\u0259\u015fdirilmi\u015f b\u0259rkidin d\u0259n\u0259l\u0259rinin dal\u011falanan s\u0259th enerjisi (Es) aras\u0131ndak\u0131 f\u0259rqdir ki, bu da sistemin s\u0259rb\u0259st enerjisinin azalmas\u0131na s\u0259b\u0259b olur. M\u00fcvafiq miqdarda B4C il\u0259 dopinq edildikd\u0259, sinterl\u0259\u015fm\u0259 zaman\u0131 B4C SiC d\u0259n\u0259 s\u0259rh\u0259dind\u0259 yerl\u0259\u015f\u0259r\u0259k qism\u0259n SiC il\u0259 b\u0259rk h\u0259ll yarad\u0131r v\u0259 bel\u0259likl\u0259 SiC-nin d\u0259n\u0259 s\u0259rh\u0259di potensial\u0131n\u0131 azald\u0131r. M\u00fclayim miqdarda s\u0259rb\u0259st C-nin doplanmas\u0131 b\u0259rk fazal\u0131 sinterl\u0259\u015fm\u0259y\u0259 faydal\u0131d\u0131r, \u00e7\u00fcnki SiC s\u0259thi ad\u0259t\u0259n oksidl\u0259\u015fir v\u0259 n\u0259tic\u0259d\u0259 az miqdarda SiO\u2082 \u0259m\u0259l\u0259 g\u0259lir, m\u00fclayim miqdarda C \u0259lav\u0259 edilm\u0259si is\u0259 SiC s\u0259thind\u0259ki SiO\u2082 filminin reduksiyas\u0131na k\u00f6m\u0259k edir v\u0259 bel\u0259likl\u0259 Eb s\u0259th enerjisini art\u0131r\u0131r.
\n SiC sistemi 1,013\u00d710^5 Pa v\u0259 1880 \u00b0C-d\u0259n y\u00fcks\u0259k temperaturda par\u00e7alanma v\u0259 sublimasiya prosesl\u0259rind\u0259n ke\u00e7ir. SiC sistemind\u0259 Si, Si2, Si3, C, C2, C3, C4, C5, SiC, Si2C, SiC2 v\u0259 s. kimi qaz fazalar\u0131 m\u00f6vcuddur, temperatur f\u0259rqi is\u0259 SiC kristallar\u0131n\u0131n b\u00f6y\u00fcm\u0259si zaman\u0131 sublimasiya prosesinin \u0259sas h\u0259r\u0259k\u0259tvericisidir v\u0259 b\u00fct\u00fcn proses k\u00fctl\u0259 da\u015f\u0131nmas\u0131 t\u0259r\u0259find\u0259n idar\u0259 olunur. SiC sistemind\u0259ki bu m\u00fcxt\u0259lif qaz fazalar\u0131 diffuziya yolu il\u0259 SiC kristal anas\u0131n\u0131n \u00fcz\u0259rind\u0259 birl\u0259\u015f\u0259r\u0259k SiC kristal hiss\u0259cikl\u0259rinin b\u00f6y\u00fcm\u0259sin\u0259 s\u0259b\u0259b olur. C+B4C sinterl\u0259\u015fdirm\u0259 k\u00f6m\u0259k\u00e7i sistemi n\u00fcmun\u0259l\u0259ri \u00fc\u00e7\u00fcn t\u0259l\u0259b olunan sinterl\u0259\u015fdirm\u0259 temperaturu \u0259sas\u0259n b\u0259rk fazal\u0131 sinterl\u0259\u015fdirm\u0259 s\u0259b\u0259bind\u0259n daha y\u00fcks\u0259kdir v\u0259 argon t\u0259xmin\u0259n 1300 \u00b0C-d\u0259 qoruyucu atmosfer kimi verilir, \u00e7\u00fcnki argon 1300 \u00b0C-d\u0259n yuxar\u0131 temperaturlarda SiC-nin par\u00e7alanmas\u0131n\u0131 azaltma\u011fa \u0259lveri\u015flidir. SiC sinterl\u0259nmi\u015f b\u0259d\u0259nin keyfiyy\u0259tini \u00f6l\u00e7m\u0259k \u00fc\u00e7\u00fcn iki z\u0259ruri \u015f\u0259rt var: m\u00fcmk\u00fcn q\u0259d\u0259r s\u0131x, y\u0259ni a\u015fa\u011f\u0131 g\u00f6zeneklilik; m\u00fcmk\u00fcn q\u0259d\u0259r ki\u00e7ik d\u0259n\u0259 \u00f6l\u00e7\u00fcs\u00fc.<\/p>","protected":false},"excerpt":{"rendered":"
The sintering of silicon carbide ceramic containing C and B4C elements as sintering aids is solid-phase sintering, and the sintering process is mainly controlled by the diffusion mechanism, with an optimum sintering temperature of 2150\u00b0C. The sintering process is simple and easy to control. Add the appropriate content of C + B4C sintering additives […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"ngg_post_thumbnail":0,"footnotes":""},"categories":[30],"tags":[],"class_list":["post-574","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts\/574","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/comments?post=574"}],"version-history":[{"count":3,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts\/574\/revisions"}],"predecessor-version":[{"id":577,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/posts\/574\/revisions\/577"}],"wp:attachment":[{"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/media?parent=574"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/categories?post=574"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbide.net\/az\/wp-json\/wp\/v2\/tags?post=574"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}